The double-bond conversion of UV-cured resins prepared from pentaerythritol triacrylate (PETA) was determined by pyrolysis-gas chromatography in the presence of an organic alkali, tetramethylammonium hydroxide (TMAH). The pyrogram of the uncured prepolymer compound, consisting of PETA and a photoinitiator, 2,2-dimethoxy-2-phenylacetophenone, contained specific products reflecting the original a...

Different approaches to obtain sharp silicon tips with a variety of aspect ratios, for potential use in advanced microelectronics applications, were studied. Tips suited for atomic force microscopy and field emission arrays were formed by wet chemical etching of (100) and (111) single crystal silicon in KOH, TMAH and HNA etchant. Apex sharpening with thermal oxidising step resulted in tips with...

Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications i...

We herein developed a simple method to process a silicon nanowire field-effect transistor (SiNW-FET) sensor by using HNA to define the nanowire and top-down fabrication method. Problems caused by the dry and TMAH etchings were effectively avoided, and the surface to volume ratio of the nanowire was increased by the HNA etching at the same time. After SiNWs were covalently modified with DNA prob...

The development of nanoscale devices requires rapid prototyping methods that can be applied in combination with well-known clean room processing techniques. We show that focused ion beam (FIB) Ga-ion implantation can be used for creating masks for the fabrication of silicon nanostructures by IC-compatible, anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The FIB writing modifies on...

A high Q-factor (quality-factor) spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process was investigated. The spiral inductor is manufactured on a silicon substrate. A post-process is used to remove the underlying silicon substrate in order to reduce the substrate loss and to enhance the Q-factor of the inductor. The post-process adopts RIE (...

An ultra-deep (40–120 μm) keyhole-free electrical isolation trench with an aspect ratio of more than 20:1 has been fabricated. The process combines DRIE (deep reactive ion etch), LPCVD insulating materials refilling and TMAH or KOH backside etching technologies. Employing multi-step DRIE with optimized etching conditions and a sacrificial polysilicon layer, the keyholes in trenches are prevente...