نتایج جستجو برای: transconductance

تعداد نتایج: 1298  

2001
Anand Veeravalli Edgar Sánchez-Sinencio José Silva-Martínez

A family of CMOS operational transconductance amplifiers (OTAs) has been designed for very small ’s (of the order of nanoamperes per volt) with transistors operating in moderate inversion. Several OTA design schemes such as conventional, using current division, floating-gate, and bulk-driven techniques are discussed. A detailed comparison has also been made among these schemes in terms of perfo...

Journal: :IEEE Transactions on Instrumentation and Measurement 1990

2012
M. Silvestri M. J. Uren D. Marcon M. Kuball

GaN buffer deep level centers are studied coupling measurements and device physics simulations. The impact of Feand C-doped samples on low frequency device transconductance and noise is presented. The Felevel found at 0.7 eV below the GaN conduction band results in low frequency generation-recombination noise and transconductance dispersion. The agreement with the model shows that the buffer ca...

2014
Priya Banga Akshita Singh

The OTA is an amplifier whose differential input voltage produces an output current. Thus, it is a voltage controlled current source. Operational transconductance amplifier is one of the most significant building-blocks in integrated continuous-time filters. We show that the operational transconductance amplifier (OTA), as the active element in basic building blocks. In this paper Low pass filt...

2001
Sergio Solís-Bustos José Silva-Martínez Franco Maloberti Edgar Sánchez-Sinencio

The design and implementation of a fully integrated complementary metal–oxide–semiconductor (CMOS) sixth-order 2.4 Hz low-pass filter (LPF) for medical applications is presented. For the implementation of large-time constants both linearized operational transconductance amplifiers with reduced transconductance and impedance scalers schemes for grounded capacitors are employed. Experimental resu...

2016
Abhijit Mishra Subir Kumar Maity

Impact of high-κ spacer in Asymmetric underlap double gate MOS transistor is systematically investigated with the help of a two dimensional device simulator. A significant improvement in ON current, transconductance and intrinsic gain is observed in the device using high-κ spacer material. However due to higher capacitances, device with high-κ spacer shows smaller unity gain cut-off frequency c...

1998
M. van de Gevel J. C. Kuenen J. Davidse H. M. Roermund

It is shown that an MOS weak-inversion differential pair can be linearized considerably by replacing the tail current source with a MOSFET biased in the weak-inversion triode region. Calculations show that the transconductance can be kept constant to within +5%/ 0% for input voltages up to 130 mV. This linearized differential pair is used in a third-order transconductance-C bandpass filter with...

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