In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...

Realization of chip-based all-optical and optoelectronic computational networks will require ultracompact Si-compatible modulators, ideally comprising dimensions, materials, and functionality similar to electronic complementary metal-oxide-semiconductor (CMOS) components. Here we demonstrate such a modulator, based on field-effect modulation of plasmon waveguide modes in a MOS geometry. Near-in...

We propose and demonstrate, based on the concept of a microwave bandstop filter, two quantum wave bandstop filter structures. Both structures employ nanoscale gates in a heterojunction transistor to induce a quantum cavity connected by two one-dimensional wires. As the electron wavelength is changed by the gate voltage, we observed that, at certain gate voltages, the transmission of electron wa...

In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...

We report the fabrication of transparent and flexible transistors where both the bottom gate and the conducting channel are carbon nanotube networks of different densities and Parylene N is the gate insulator. Device mobilities of 1 cm(2) V(-1) s(-1) and on/off ratios of 100 are obtained, with the latter influenced by the properties of the insulating layer. Repetitive bending has minor influenc...

in advance longwall mining, the safety of mine network, production rate, and consequently, economic conditions of a mine are dependent on the stability conditions of gate roadways. the gate roadway stability is a function of two important factors: 1) characteristics of the excavation damaged zone (edz) above the gate roadway and 2) loading effect due to the caving zone (cz) above the longwall w...

A novel implementation of Inter process communication in CDMA NOC is proposed. In this study, the orthogonality properties of a Walsh code are used to route data packets between the IP-Cores.The asynchronous circuit design with combinational logic (Gate level design) is used for transmission and receiving circuits, along with ip-cores and reduces the processing time and resource utilization. Th...

The failure and degradation mechanisms of gate-all-around silicon nanowire FET subjected to electrostatic discharge (ESD) are investigated through device modeling. Transmission line pulse stress test is simulated and device degradation physics is modeled. The device degradation level, interface state concentration and hard breakdown are shown and analyzed. From the model, we found that ESD stre...

Voltage-tunable plasmon resonances in a InGaAs/InP high electron mobility transistor (HEMT) are reported. The gate contact consisted of a 0.5 micron period metal grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the range 10 – 50 cm. The resonance frequency red-shifts with increasing negative gate bias as expected. Phot...