Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we examine the electronic structure of transition metal dichalcogenide heterostructures (TMDCHs) composed of monolayers of MoS2 and WS2. STS data are obtained for heterostructures of varying stacking configuration as well as the individual monolayers. Analysis of the tunneling spectra includes the influence of ...

Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capaci...

: In this work, we present a theoretical study of the transport properties of two finite and parallel armchair graphene nanoribbons connected to two semi-infinite leads of the same material. Using a single Π-band tight binding Hamiltonian and based on Green's function formalisms within a real space renormalization techniques, we have calculated the density of states and the conductance of these...

A novel one-step cation exchange approach has been developed to prepare ZnO-decorated ZnSe nanorods (ZnSe-ZnO NRs), a prototype type-II semiconductor nanoheterostructure. Because of the staggered band offset which promoted effective charge separation, the as-synthesized ZnSe-ZnO NRs exhibited remarkable photocatalytic activities under visible light illumination, demonstrating their promising po...

Active refrigeration of optoelectronic components through the use of thin film solid state coolers based on III-V materials is proposed and investigated. Enhanced cooling power comparing to the thermoelectric effect of the bulk material is achieved through thermionic emission of hot electrons over a heterostructure barrier layer. It is shown that these heterostructures can be monolithically int...

We report magnetoresistance measurements on a two-dimensional electron gas (2DEG) made from a high mobility GaAs/AlGaAs heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of superconducting lead grains randomly distributed on the surface of the sample. A theoretical explanation in excellent agreement with the experiment is given ...

We report an enhanced magnetoelectric (ME) effect in a heterostructure consisting of a long-type, longitudinally-longitudinally polarized 0.71Pb(Mg(1∕3)Nb(2∕3))O(3)-0.29PbTiO(3) (PMN-PT) piezoelectric single-crystal transformer with its input part sandwiched between two longitudinally magnetized Tb(0.3)Dy(0.7)Fe(1.92) (Terfenol-D) magnetostrictive alloy bars. The observed ME effect has two inde...

We report on high quality-factor Heterostructure Barrier Varactor making benefit of epitaxial stacking and planar integration, with a cut-off frequency in the far infrared region. To this aim, high doping concentrations in the depletion (2x10 17 cm) and contact (1x10 cm) InGaAs regions lattice matched to an InP substrate and an InAlAs/AlAs blocking barrier scheme were used. Planar integration o...

In this article we study the ultrafast dynamics of excitons and charge carriers photogenerated in two-dimensional in-plane heterostructures, namely, CdSe-CdTe nanoplatelets. We combine transient absorption and two-dimensional electronic spectroscopy to study charge transfer and delocalization from a few tens of femtoseconds to several nanoseconds. In contrast with spherical nanocrystals, the re...