Abstract: Telescopic amplifiers are often preferred for their large DC gain, low power dissipation and low flicker noise. On the other side, they suffer from serious problems like poor input common mode range and output swing. In this work, a simple technique to improve the input common mode range of telescopic structure is presented. To achieve this, two telescopic amplifiers using complementa...

In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage trans...

This paper reports the optimisation of the low-frequency response of a multi-stage bioelectric amplifier intended for use in the measurement of the electrocardiogram (ECG) using un-gelled electrodes. The frequency response was optimised to meet the International Electrotechnical Commission 60601 performance standards for electrocardiographs [1,2]. The low frequency response of a multi-stage amp...

We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency (fT ) of 370 GHz. The HEMT without back barrier exhibits an extrinsic transconductance (gm.ext) of 650 mS/mm and an on/off current ratio of 10 owing to the incorporation of dielectric-free passivation and regrown ohmic contacts with a contact resistance of 0.16 Ω ...

Compact low-voltage power-efficient operational amplifiers are described that are very suitable as very-largescale-integration library cells because of the small die area of 0.08 mm and the minimum supply voltage of 1.8 V. A key part of the circuit is the rail-to-rail class-AB output stage with folded mesh feedback control that combines power efficiency with operation down to 1.8 V and allows s...

This paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach was developed and successfully validated through the comparison between measured and simulated scattering parameters. The extraction of the equivalent circuit elements allowed for the estimation of the intrinsic uni...

The signal to noise ratio and resolution of an analog to digital converter is governed by the linearity constraints of the basic building block, which is the Operational Transconductance Amplifier (OTA). The OTA design is based on MOS transistors that are inherently non linear and lead to performance deterioration. To overcome the non-linearities imposed by the OTA a resistive source degenerati...

In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electron mobility transistors (HEMTs) has been attributed to a significant drop of the intrinsic small-signal transconductance (gm) with respect to the intrinsic DC gm. To reduce this gmcollapse and improve high frequency performance, we have developed a new technology based on a combination of vertical...

Power consumption is a key point in the design of high-speed switched capacitor (SC) circuits, which allow to efficiently implement a number of analog functions. Among them, SC Σ∆ modulators are very popular for A/D conversion: in this kind of circuits, operational amplifiers are the most consuming cells because of their requirements in terms of DC gain and unitygain frequency. A new amplifier ...

Short channel MOSFET exhibits the characteristics of wide bandwidth and low DC gain. A gain causes a high error narrow output linear range in closed loop. The gains can be improved by using cascade structure, but frequency compensation is required due to increase number poles. nodes each stage Common-Source amplifier have zero, this zero cancelled out input node next stage. This paper proposes ...