A pulsed layer-by-layer deposition (PLLD) technique possessing triple growth rates compared to conventional growth techniques is developed by metal organic chemical vapor deposition to realize high-quality high-aluminum content ordered AlXGa(1 X)N (0.5<X). X-ray diffraction, photoluminescence, and transmission measurements are employed to demonstrate control over aluminum content, structural un...

I Tsiaoussis, Volodymyr Khranovskyy, G P Dimitrakopulos, J Stoemenos, Rositsa Yakimova and B Pecz, Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates, 2011, JOURNAL OF APPLIED PHYSICS, (109), 4, 043507. http://dx.doi.org/10.1063/1.3549140 Copyright: American Institute of Physics http://www....

We report on the fabrication of channel waveguides in epitaxial grown BaTiO3 layers on MgO. Layers were prepared by metalorganic chemical vapor deposition. Ridge waveguides with ridge heights ranging from 15 to 200 nm were fabricated in a 0.2-mm-thick film. Single mode waveguide throughput, scattering loss, and mode profiles are reported. Coating waveguides with spin on glass significantly incr...

A novel low-temperature method based on a combination of pulsed laser deposition and metalorganic chemical vapour deposition was used to fabricate GaN thin films doped with rare-earth (RE) ions. The films were deposited on GaN/Al2O3 substrates. The x-ray diffraction analysis of these GaN : RE (RE = Eu, Tb) samples showed that the films have the hexagonal phase of GaN and are polycrystalline wit...

We investigated the morphological and structural change in silicon nanostructures embedded in the silicon oxynitride matrix. The study has been carried out on thin films thermally annealed at high temperature, after deposition at 400°C by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition (ECR‐ PECVD), under different deposition parameters. Our stud...

We discuss a custom built hybrid physical chemical vapour deposition (HPCVD) system for MgB2 ultra-thin film deposition: construction, deposition process development, and optimization. Achieved films on SiC substrates have a critical temperature (Tc) ranging from 35K (10nm thick films) to 41K (40nm thick films). The 20nm thick unpatterned film had a room temperature resistivity of 13μΩ·cm, wher...