In this paper, we report the latest progress of a GaN-based broad-band power amplifier using AlGaN/GaN high electron mobility transistors (HEMTs), grown on sapphire substrates, as the active devices. The devices were flip-chip integrated onto the aluminum nitride circuit board for thermal management and electric connection. The circuit topology used novel -matching networks in a four-way binary...

In this paper, a novel W-band substrate integrated waveguide (SIW) power combiner/divider is analyzed theoretically and demonstrated experimentally/numerically, based on the antipodal fin-line SIW-rectangular waveguide (SIW-RW) transition and longitudinal slot coupling techniques. This antipodal fin-line SIW-RW transition can work at the frequency band of 86.4GHz– 106.1GHz with return loss larg...

An experimental investigation of high-temperature dc SQUID amplifier connected in series with a high-Tc superconductor (HTS) thin-film band-pass filter is presented. The SQUID amplifiers are designed with microstrip input coils and fabricated on bicrystal substrates of zirconia and sapphire with different misorientation angles of 24 and 37 . SQUID parameters are optimized to attain 50-X input i...

an active antenna for transmitter application in s frequency band is designed and analyzed using harmonic balance technique which is based on the nonlinear model of active devices. in this active antenna, the amplifier is integrated with the radiator which is a rectangular patch antenna. this patch antenna is analyzed employing full-wave momentum method. by applying nonlinear model of transisto...

The existing UHF Satellite Communications (SATCOM) transponders used for military applications use efficient, saturated power amplifiers, which provide one earth-coverage antenna beam. The amplifier is dedicated to small frequency band and only handles a few carriers simultaneously. The communications capacity needed to support future military forces on the move will require satellite payload p...

In this paper, we have developed a high power solid-state power amplifier (SSPA) for Sband military radars. The SSPA consists of a high power amplifier (HPA) module combined GaN based power amplifier pallets, a drive amplifier (DA) module, a digital control module and a power supply unit. The SSPA shows the total output power of 62 dBm in S-band.