In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-s...

Here we report the growth of phase-pure InAs nanowires on Si (111) substrates by molecular-beam epitaxy using Ag catalysts. A conventional one-step catalyst annealing process is found to give rise to InAs nanowires with diameters ranging from 4.5 to 81 nm due to the varying sizes of the Ag droplets, which reveal strong diameter dependence of the crystal structure. In contrast, a novel two-step ...

Any device exposed to ambient conditions will be prone to oxidation. This may be of particular importance for semiconductor nanowires because of the high surface-to-volume ratio and only little is known about the consequences of oxidation for these systems. Here, we study the properties of indium arsenide nanowires which were locally oxidized using a focused laser beam. Polarization dependent m...

GaN is being considered as a viable alternative semiconductor for high-power solid-state electronics. This creates a demand for the characterization of the main scattering channel at high electric fields. The dominant scattering mechanism for carriers reaching high energies under the influence of very high electric fields is the polar optical phonon (POP) emission. To highlight the directional ...

This study reports piezoelectric properties and crystallographic microstructures of aluminium nitride (AlN, wurtzite structure) thin films on 50 μm thick stainless steel foil. The transverse piezoelectric coefficient d31,f and e31,f of 10 μm thick AlN films were estimated as -1.42 ± 0.08 pm/V and -0.48 ± 0.03 C/m 2 from a tip displacement of the piezoelectric cantilevers. Dielectric constant ε3...

The local luminescence properties of individual CdSe nanowires composed of segments of zinc blende and wurtzite crystal structures are investigated by low-temperature scanning tunneling luminescence spectroscopy. Light emission from the wires is achieved by the direct injection of holes and electrons, without the need for coupling to tip-induced plasmons in the underlying metal substrate. The p...

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Using inverse statistical-mechanical optimization techniques, we have discovered isotropic pair interaction potentials with strongly repulsive cores that cause the tetrahedrally coordinated diamond and wurtzite lattices to stabilize, as evidenced by lattice sums, phonon spectra, positive-energy defects, and self-assembly in classical molecular dynamics simulations. These results challenge conve...

The crystal phase of Au-NWs is assessed by means of high-resolution transmission electron microscopy (HR-TEM). NWs are dispersed on a transmission electron microscopy (TEM) grid and imaged with a JEOL 4000EX-II TEM. Figure S-2(a) shows a HR-TEM lattice imaging of a representative Au-NW. The measured interplanar spacing (3.74 Å) is consistent with the (110) planes of a CdSe crystal with the wurt...