نتایج جستجو برای: zener diode

تعداد نتایج: 21983  

2017
Kathryn A Burrows Barry M Garraway Hélène Perrin

Non-adiabatic decay rates for a radio-frequency dressed magnetic trap are calculated using Fermi’s Golden Rule: that is, we examine the probability for a single atom to make transitions out of the dressed trap and into a continuum in the adiabatic limit, where perturbation theory can be applied. This approach can be compared to the semi-classical Landau-Zener theory of a resonant dressed atom t...

Journal: :The journal of physical chemistry. B 2013
A I Chichinin

J. Phys. Chem. B 2005, 109 (17), 8428−8430. DOI: 10.1021/jp040627u T Landau−Zener formula was derived in 1932 and since then has remained an important tool in molecular dynamics and spectroscopy. In 2005, C. Witting proposed a simple derivation of the formula; it looks very useful and probably will be widely used. In this Comment, a new derivation of the Landau−Zener formula is proposed. Severa...

2013
Jani Tuorila Matti Silveri Mika Sillanpää Erkki Thuneberg Yuriy Makhlin Pertti Hakonen

We study the novel nonlinear phenomena that emerge in a charge qubit due to the interplay between a strong microwave flux drive and a periodic Josephson potential. We first analyse the system in terms of the linear Landau–Zener–Stückelberg model, and show its inadequacy in a periodic system with several Landau–Zener crossings within a drive period. Experimentally, we probe the quasienergy level...

Journal: :Physical review letters 2009
A Zenesini H Lignier G Tayebirad J Radogostowicz D Ciampini R Mannella S Wimberger O Morsch E Arimondo

We report time-resolved measurements of Landau-Zener tunneling of Bose-Einstein condensates in accelerated optical lattices, clearly resolving the steplike time dependence of the band populations. Using different experimental protocols we were able to measure the tunneling probability both in the adiabatic and in the diabatic bases of the system. We also experimentally determine the contributio...

Journal: :Physical review letters 2011
S Gasparinetti P Solinas J P Pekola

We propose a new type of interferometry, based on geometric phases accumulated by a periodically driven two-level system undergoing multiple Landau-Zener transitions. As a specific example, we study its implementation in a superconducting charge pump. We find that interference patterns appear as a function of the pumping frequency and the phase bias, and clearly manifest themselves in the pumpe...

2015
Bo Jin Lijun Zhao Shiqiang Zhu

A multi-way control system for spun yarn breakage detecting and tow stopping is presented for linen wet spinning frame upgrade in medium-sized businesses of southeastern China. The signals from periodic rotations of spun yarns are picked by piezoelectric sensors. After input protection and multiplexers, the weak voltage signal from gated channel is processed through links including voltage foll...

2011

In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by vacuum evaporation on a glass substrate with previously deposited Ag source and drain electrodes with...

2010
A. R. Ondrejka P. A. Hudson

Two systems for the measurement and standardization of peak pulse voltage have recently been developed in the Radio Standards Engineering Division of the National Bureau of Standards. Des igned for use with pulses having durations as short as 10 nanoseconds, the s ystems represent the initi al e ffort by NBS for establishment of standards in this fi eld and it is expected that they will serve a...

Journal: :Nano letters 2013
Moh R Amer Shun-Wen Chang Rohan Dhall Jing Qiu Stephen B Cronin

We investigate the electronic and optoelectronic properties of quasi-metallic nanotube pn-devices, which have smaller band gaps than most known bulk semiconductors. These carbon nanotube-based devices deviate from conventional bulk semiconductor device behavior due to their low-dimensional nature. We observe rectifying behavior based on Zener tunneling of ballistic carriers instead of ideal dio...

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