نتایج جستجو برای: اصل 68
تعداد نتایج: 80890 فیلتر نتایج به سال:
We calculate the electronic states of the Mn-doped semiconductors and show that resonant states are formed at the top of the down spin valence band due to magnetic impurities and that they give rise to a strong and long-ranged ferromagnetic coupling between Mn moments. We propose that the coupling of the resonant states, in addition to the intra-atomic exchange interaction between the resonant ...
The sacroiliac joint (SIJ) was considered the primary source of low back pain in the early 20th century (1). It became overshadowed by the herniated nucleus pulposus after the hallmark 1934 article by Mixter and Barr (2). Mounting evidence on computed tomography (CT), magnetic resonance imaging (MRI), and scintography demonstrating destructive, inflammatory, and degenerative pathology (3-9) sug...
We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low-temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, in situ Auger spectroscopy, and resistivity measurements dur...
Using synchrotron based photoemission, we have investigated the Mn-induced changes in Ga 3d core level spectra from as-grown Ga(1-x)Mn(x)As. Although Mn is located in Ga substitutional sites, and therefore does not have any Ga nearest neighbors, the impact of Mn on the Ga core level spectra is pronounced even at Mn concentrations in the region of 0.5%. The analysis shows that each Mn atom affec...
امروزه یکی از چالش بسیار مهم در عرصه مهندسی بافت، بهینه کردن داربست ها جهت جداسازی، تکثیر و تمایز سلول ها می باشد. در این زمینه تحقیقاتی در سطح دنیا انجام شده است و از پلیمرهای گوناگونی جهت نیل به این هدف بهره برده شده است. در بحث مربوط به داربست خصوصیاتی مد نظر می باشد که در این زمینه محققان بسیاری تحقیق کرده اند. از آن جمله می توان موارد زیر را نام برد: قدرت مکانیکی جهت تقلید از شرایط موجود...
We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal-insulator-ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the a...
We consider current-induced domain wall motion and, the reciprocal process, moving domain wall-induced current. The associated Onsager coefficients are expressed in terms of scattering matrices. Uncommonly, in (Ga,Mn)As, the effective Gilbert damping coefficient alphaw and the effective out-of-plane spin-transfer torque parameter betaw are dominated by spin-orbit interaction in combination with...
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