We report the realization of a prototype solar cell based on a ZnO/ZnSe core/shell nanowire array. The ZnO/ZnSe core/shell nanowire forms a type II heterojunction that can have an effective bandgap much below that of either component. The nanowire array architecture offers strong enhancement in light absorption through increasing the junction area and light trapping. The device shows a photo-re...

Polycrystalline thin films of ZnSe and ZnSxSe1−x have been deposited on glass substrates by Aerosol Assisted Chemical Vapour Deposition (AACVD) from bis(diethyldiselenocarbamato)zinc(II) and a 1:1 and 1:0.75 mixtures of bis(diethyldiselenocarbamato)zinc(II) and bis(diethyldithiocarbamato)zinc(II) as precursors. All films were characterized by p-XRD, SEM, EDX, Raman spectroscopy, photoluminescen...

This work reports the use of a near-UV-LED chip in combination with blue, green-yellow and red emitting doped ZnSe QD@silica nanocomposites to construct a novel WLED with reduced scattering and no reabsorption. Blue, green-yellow and red emitting Cu or Mn doped ZnSe QDs with enlarged Stokes shifts and similar absorption peaks (360-410 nm) were synthesized in liquid paraffin in order to solve th...

We report the synthesis of ZnSe:Mn quantum dots (QDs) in the dispersed phase of a microemulsion template consisting of p-xylene as the continuous phase, water as the dispersed phase, and an amphiphilic block copolymer (Pluronic P105) as the surfactant. The Zn and Mn precursors were Zn-acetate and Mn-acetate, respectively, dissolved in the aqueous dispersed phase. Hydrogen selenide gas was bubbl...

One-pot, facile solution phase approach is explored for the fabrication of uniform and nearly monodispersed colloidal ZnSe semiconductor quantum dots (QDs). ZnSe QDs have been synthesized by wet chemical, template free process by Zink acetate and elemental Selenium powder in presence of ethylene glycol, hydrazine hydrate and a defined amount of water at 70C. The product was in strong quantum co...

Deep defects are often assumed to be insensitive to applied pressure because of their localized character. However, in recent photoluminescence (PL) experiments, several deep acceptor bands in ZnSe were found to shift with pressure substantially faster than the ZnSe bandgap. This shows that the optical (viz., PL) levels of these acceptors become more shallow under compression, a result that, if...

Point defects in epitaxial GaN and ZnSe semiconductor layers have been studied using a low-energy positron beam. Ga vacancies are found to be present in n-type GaN grown by metal organic chemical vapor deposition, where the conductivity is due to residual oxygen. When n-type silicon impurity doping is done, clearly less vacancies are observed. In Mgdoped p-type and semi-insulating materials the...

We report a two-step synthesis of highly luminescent CdS/ZnSe core/shell nanocrystals (emission quantum yields up to 50%) that can produce efficient spatial separation of electrons and holes between the core and the shell (type-II localization regime). Our synthesis involves fabrication of cubic-singony CdS core particles that are subsequently overcoated with a layer of ZnSe in the presence of ...