نتایج جستجو برای: نانوذرات sic

تعداد نتایج: 20422  

2011
Yong Li Changxin Chen Jiang-Tao Li Yun Yang Zhi-Ming Lin

Colloidal cubic silicon carbide (SiC) nanocrystals with an average diameter of 4.4 nm have been fabricated by anisotropic wet chemical etching of microsized cubic SiC powder. Fourier transform infrared spectra show that these cubic SiC nanocrystals contain carboxylic acid, SiH, CH, and CHx groups. UV/Vis absorption and photoluminescence (PL) spectroscopy clearly indicate that water and ethanol ...

Journal: :Microelectronics Journal 2007
Gemma Gabriel Ivan Erill Jaume Caro Rodrigo Gómez Dolors Riera Rosa Villa Philippe Godignon

Semi-insulating silicon carbide (SiC) is a fully processable semiconductors substrate that is commonly used as an alternative to conventional silicon (Si) in high-power applications. Here we examine the feasibility of using SiC as a substrate for the development of minimally invasive multi-sensor micro-probes in the context of organ monitoring during transplantation. In particular, we make a th...

2008
Haruhiko Morito Hisanori Yamane Takahiro Yamada Shu Yin Tsugio Sato

SiC porous granules were synthesized from activated granular charcoal and Si powder at 973K by using a Na flux. The SiC granules maintained the shape of the charcoal with a dimension of about 5mm in diameter and 7–10mm in length. X-ray diffraction showed the structure of the formed SiC to be cubic -type. Agglomerates of a few dozen nm of SiC grains and an electron diffraction ring pattern of -S...

Journal: :Scientific reports 2016
Yufeng Zhang Nanying Lin Yaping Li Xiaodan Wang Huiqiong Wang Junyong Kang Regan Wilks Marcus Bär Rui Mu

ZnO/SiC heterojunctions show great potential for various optoelectronic applications (e.g., ultraviolet light emitting diodes, photodetectors, and solar cells). However, the lack of a detailed understanding of the ZnO/SiC interface prevents an efficient and rapid optimization of these devices. Here, intrinsic (but inherently n-type) ZnO were deposited via molecular beam epitaxy on n-type 6H-SiC...

2008
T. Nozawa A. Kohyama H. Tanigawa

Silicon carbide composites (SiC/SiC) are promising candidate materials for fusion reactors. For the practical application of this class of materials, a design basis for SiC/SiC composites needs to be developed because of inherent brittle-like fracture, i.e., quasi-ductility, which is totally different from ductility of metals. For this purpose, the failure behavior, i.e., matrix cracking behavi...

Journal: :Toxicology in vitro : an international journal published in association with BIBRA 2014
Delphine Boudard Valérie Forest Jérémie Pourchez Najih Boumahdi Maura Tomatis Bice Fubini Bernard Guilhot Michèle Cottier Philippe Grosseau

Silicon carbide (SiC) an industrial-scale product manufactured through the Acheson process, is largely employed in various applications. Its toxicity has been poorly investigated. Our study aims at characterizing the physico-chemical features and the in vitro impact on biological activity of five manufactured SiC powders: two coarse powders (SiC C1/C2), two fine powders (SiC F1/F2) and a powder...

2011
Baratunde A. Cola Xianfan Xu Timothy Fisher Michael A. Capano Placidus B. Amama Timothy S. Fisher

Multiwalled carbon nanotube (MWCNT) arrays have been directly synthesized from templated Fe2O3 nanoparticles on the C-face of 4H-SiC substrates by microwave plasma chemical vapor deposition (MPCVD), and the room-temperature thermal resistances of SiC-MWCNT-Ag interfaces at 69–345 kPa as well as the thermal resistances of SiCMWCNT-Ag interfaces up to 250 C (at 69 kPa) have been measured using a ...

2013
Shin-ichi Nishizawa Tomonori Ito Toru Akiyama Kohji Nakamura Bing Gao Koichi Kakimoto

SiC single crystal is usually grown by sublimation (modified Lely method). There is a lotof remaining issues that should be solved. One is the technical problems of SiC single crystal growth process. And the other is the theoretical problem based on SiC physical properties. As the example of technical issues, in this paper, the example of design optimization for SiC sublimation growth is descri...

2017
Sayan Seal Homer Alan Mantooth

This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bon...

2013
Ren KIMURA Kousuke UCHIDA Toru HIYOSHI Mitsuhiko SAKAI Keiji WADA Yasuki MIKAMURA

Recently, energy saving is strongly required to prevent global warming. Electricity is the most common energy form and is necessary in our daily life and various activities, because it is comparatively easy to utilize in transmission and conversion after generation. Therefore, it is very important to reduce energy loss in electric power systems and improve their efficiency. The present power sy...

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