نتایج جستجو برای: a resistive layer 400 ohm
تعداد نتایج: 13495821 فیلتر نتایج به سال:
Numerical methods for 1D forward modeling and inversion of marine controlled-source electromagnetic !CSEM" data are used to examine the inherent resolution of various acquisition configurations to thin resistive layers simulating offshore hydrocarbon reservoirs. Synthetic data studies indicate that jointly inverting frequencies of 0.1 and 1.0 Hz offers better resolution than inverting either fr...
In this letter, a double active layer (Zr:SiOx/C:SiOx) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiOx layer. Compa...
We present a quantum mechanical memristive Nb/Al/Al2O3/NbxOy/Au device which consists of an ultra-thin memristive layer (NbxOy) sandwiched between an Al2O3 tunnel barrier and a Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) and HRS (high resistance state) for areas ranging between 70 μm2 and 2300 μm2 were obtained, which indicates a non-filamenta...
The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on HfO2 thin films have been demonstrated by using Ag/HfO2/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with HfO2 thin films as a transition layer. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity cha...
To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/...
Interaction of scrape-off layer currents with magnetohydrodynamical instabilities in tokamak plasmas
A simple theoretical model is developed which describes how current eddies are excited in the scrape-off layer SOL of a large-aspect-ratio, low, circular cross-section tokamak by time-varying magnetohydrodynamical instabilities originating from within the plasma. This model is used to study the interaction of SOL currents with tearing modes and resistive wall modes in a typical tokamak plasma. ...
Hukum Ohm menyatakan hubungan linier antara beda potensial dengan kuat arus pada bahan berhambatan jika suhu konstan. Perlu adanya penelitian terkait konsistensi tahanan cincin terhadap hukum Ohm, dikarenakan banyaknya peralatan elektronik yang menggunakan cincin. Penelitian dilakukan bertujuan untuk memverifikasi perbandingan listrik sesuai persamaan ohm. Dalam ini (resistor) variasi nilai res...
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