نتایج جستجو برای: al2o3 precursor
تعداد نتایج: 79717 فیلتر نتایج به سال:
The effect of -Al2O3 particles on the electrochemical codeposition behaviour of Co–Ni alloys from sulfamate electrolyte was investigated by codeposition experiments, zeta potential and electrochemical methods. The results indicate that the presence of Al2O3 particles in Co–Ni sulfamate electrolytes contributes to the preferential codeposition of Co. Moreover, increasing Co2+ concentration also ...
We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We...
The thermal atomic layer etching (ALE) of Al2O3 can be performed using sequential and self-limiting reactions with trimethylaluminum (TMA) and hydrogen fluoride (HF) as the reactants. The atomic layer deposition (ALD) of AlF3 can also be accomplished using the same reactants. This paper examined the competition between Al2O3 ALE and AlF3 ALD using in situ Fourier transform infrared (FTIR) vibra...
Single-phase cerium aluminate was synthesized from mixtures of ceria and metallic aluminum by milling firing under controlled conditions in reducing (10%H2 + 90%N2) or inert atmospheres (N2 CO2). Firing an atmosphere (CO2) did not yield conversion to aluminate, also low after only improved slightly on changing powder with coarse Al (15 µm) submicron (0.77 µm). High-energy promoted reactivity th...
We report the characterization of aluminum oxide (Al2O3) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge...
In this study, the phase transition characteristics of flame-synthesized γ-Al2O3 nanoparticles to α-Al2O3 have been investigated. The nanoparticles were synthesized by using a coflow hydrogen diffusion flame. The phase transition and particle characteristics of the Al2O3 nanoparticles were determined by examining the crystalline structure and the shape of the collected nanoparticles before and ...
*Correspondence: Muhammad Rizwan Saleem, Center for Energy Systems (CES), USAID Center for Advance Studies, National University of Sciences and Technology (NUST), Sector H-12, Islamabad 44000, Pakistan e-mail: [email protected]; [email protected] We review the significance of optical thin films by Atomic Layer Deposition (ALD) method to fabricate nanophotonic devices and structures. A...
In this study, γ-Al2O3 particles were dispersed in p-type Bi0.4Sb1.6Te3 through mechanical alloying to form γ-Al2O3/Bi0.4Sb1.6Te3 composite powders. The composite powders were consolidated using vacuum hot pressing to produce nanoand microstructured composites. Thermoelectric (TE) measurements indicated that adding an optimal amount of γ-Al2O3 nanoparticles improves the TE performance of the fa...
Structures and testing methods for measuring the adhesion strength, minimum bending diameter, and bending fatigue performance of thin-film polymer electronic architectures were developed and applied to Parylene–metal–Parylene systems with and without the moisture barrier Al2O3 [deposited using atomic layer deposition (ALD)]. Parylene–metal– Parylene interfaces had the strongest average peel tes...
The aluminum oxide (Al2O3) thin films with various thicknesses under 50 nm were deposited by atomic layer deposition (ALD) on silicon substrate. The surface topography investigated by atomic force microscopy (AFM) revealed that the samples were smooth and crack-free. The ellipsometric spectra of Al2O3 thin films were measured and analyzed before and after annealing in nitrogen condition in the ...
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