نتایج جستجو برای: band to band tunneling
تعداد نتایج: 10656274 فیلتر نتایج به سال:
The mechanisms of carrier injection and recombination in a GaN/InGaN single quantum well light-emitting diodes have been studied. Strong defect-assisted tunneling behavior has been observed in both forward and reverse current– voltage characteristics. In addition to band-edge emission at 400 nm, the electroluminescence has also been attributed to radiative tunneling from band-to-deep level stat...
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The paper describes a new approach to calculating the currents in a pn-diode based on the extension of the Shockley-Read-Hall recombination-generation model. The presented theory is an alternative to Schenk’s model of trap-assisted tunneling. The new approach takes into account generation and recombination as well as tunneling processes in pn-junctions. Using this model, the real “soft” I-V cur...
A semi-empirical model is proposed to quantify the tunneling currents through ultrathin gate oxides (1–3.6 nm). As a multiplier to a simple analytical model [1], [2], a correction function is introduced to achieve universal applicability to all different combinations of bias polarities (inversion and accumulation), gate materials (N, P, Si, SiGe) and tunneling processes. Each coefficient of the...
There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15–25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to ...
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