Boron nitride (BN)-based nanomaterials attract considerable attention due to their unique properties. In this study, we found that sonication treatment of multiwalled boron nitride nanotubes (BNNTs) in primary alcohols had led to chemical peeling of their sidewalls through alcoholysis, thereby producing boron nitride nanoribbons (BNNRs).

Density functional theory (DFT) calculations have been performed to investigating the effects of themolecular oxygen impurity on the quadrupole coupling constant (Qcc) parameters of armchair and zigzagboron nitride nanotubes (BNNTs). Optimization processes have been performed to relax the original andimpure structures of the investigated BNNTs. Afterwards, the Qcc parameters have been evaluated...

Boron nitride nanotubes (BNNTs), the structural analogues to carbon (CNTs), attracted considerable attention due their excellent properties. However, synthesis of BNNTs suffers from high-temperature requirement, which increases cost and adds complexity instruments (arc-discharge, plasma-assisted CVD, etc.), preventing further exploration use harmful chemicals (catalytic chemical vapor depositio...

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used a...

Irradiation-induced vacancy defects in multiwalled (MW) boron nitride nanotubes (BNNTs) are investigated via in situ high-resolution transmission electron microscope operated at 80 kV, with a homogeneous distribution of electron beam intensity. During the irradiation triangle-shaped vacancy defects are gradually generated in MW BNNTs under a mediate electron current density (30 A cm(-2)), by kn...

High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digi...

The aim of this research is studying the effects of Ge-doped on CO adsorption on the outer and inner surfaces of (6, 0) zigzag model of boron nitride nanotube (BNNTs) by using DFT theory. For this purpose, eight models of CO adsorption on the surfaces of BNNTs are considered. At first step, all structures were optimized at B3LYP and 6-31G (d) standard base set and then the electronic structure,...

Lithium storage and capture are of particular importance for the development new technology in electric vehicles portable electronics. Nanotubes (NTs) among many porous nanomaterials offered as potential candidates lithium storage. In this paper, we adopt a continuum approach together with Lennard–Jones function to determine minimum interaction energies atoms boron nitride nanotubes (BNNTs) car...

This paper reports the influence of surfactant Triton X-100 on boron nitride nanotubes (BNNTs) nanofluid in non-optimized and optimized microchannel heat sink (MCHS) at 30 °C 50 °C. The MCHS performance was evaluated terms thermal resistance pressure drop, utilizing experimental thermophysical properties distilled water, a mixture water as base fluid, BNNTs weight concentration 0.001% into mode...

the monitoring and controlling of environmental pollutions are very important in biological and industrial processes, and a great interest is growing with the development of suitable gas–sensitive materials and hazardous chemical removal devices. in this work, the highly parameterized, empirical exchange–correlation functional m06–2x were employed to investigate the electronic sensitivity of pe...