Simultaneous switching noise (SSN) is a major cause of power integrity (PI) degradation that causes circuits to become unstable and experience errors. As modern ICs operate at higher speeds with higher density and lower voltages, SSN has become a serious issue that must be addressed to ensure system stability during the short riseand fall-times of the logic transient states. Most traditional de...

This paper presents the design of a compact third-order sinusoidal oscillator based on an operational transresistance amplifier (OTRA). The proposed circuit consists of a single OTRA combined with three resistors and three capacitors. A review of relevant literature revealed that this is the first study to design a third-order sinusoidal oscillator, constructed with a single OTRA and the minima...

Buffer layers that control electrochemical reactions and physical interactions at electrode/film interfaces are key components of an organic photovoltaic cell. Here the structure and properties of layers of semi-rigid poly(3-hexylthiophene) (P3HT) chains tethered at a surface are investigated, and these functional systems are applied in an organic photovoltaic device. Areal density of P3HT chai...

In credit-based flow control for ATM networks, buffer is jirst allocated to each VC (virtual circuit) and then credit control is applied to the VC for avoiding possible buffer overjow. Receiveroriented, adaptive buffer allocation allows a receiver to allocate its buffer dynamically, to VCs from multiple upstream nodes based on their bandwidth usage. This paper describes, in detail, such an adap...

In small-size Complementary Metal Oxide Semiconductor (CMOS) technology, the size of Very Large-Scale Integration (VLSI) below 90nm becomes higher and due to enhancement short channel effect transistors. CMOS Buffer is a very common circuit unit in VLSI. this paper, Pileup transistor (PET) proposed reduce subthreshold leakage current buffer. The main principle PET technology voltage difference ...

The infl uences of morphology and thickness of zinc oxide (ZnO) buffer layers on the performance of inverted polymer solar cells are investigated. ZnO buffer layers with different morphology and thickness varying from several nanometers to ≈ 55 nm are fabricated by adjusting the concentration of the precursor sol. The ZnO buffer layers with nearly same surface quality but with thickness varying...