We report on the 1/f noise in various ballistic carbon nanotube devices. A common means to characterize the quality of a transistor in terms of noise is to evaluate the ratio of the noise amplitude and the sample resistance . By contacting semiconducting tubes with different metal electrodes we are able to show that a small / value by itself is no indication of a suitable metal/tube combination...

A method to fabricate integrated single-walled carbon nanotube/microfluidic devices was developed. This simple process could be used to directly prepare nanotube thin film transistors within the microfluidic channel and to register SWNT devices with the microfludic channel without the need of an additional alignment step. The microfluidic device was designed to have several inlets that deliver ...

As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. In this paper first we have reviewed carbon nanotube field effect transistor (CNTFET) and types of CNTFET. We have then studied the effect of channel length and chirality on the drain current for planer CNTFET. The Id~Vd curves for planer CNTFETs having different chan...

s of Papers of the American Chemical Society, vol. 227,pp. U266-U266, 2004.[52] J. Appenzeller and D. J. Frank, "Frequency dependent characteri-zation of transport properties in carbon nanotube transistors," Ap-plied Physics Letters, vol. 84, pp. 1771-1773, 2004.[53] D. J. Frank and J. Appenzeller, "High-frequency response in car-bon nanotube field-effect transistors," I...

Carbon-nanotube-based electronics offers significant potential as a nanoscale alternative to silicon-based devices for molecular electronics technologies. Here, we show evidence for a dramatic electrical switching behaviour in a Y-junction carbon-nanotube morphology. We observe an abrupt modulation of the current from an on- to an off-state, presumably mediated by defects and the topology of th...

In this paper, we describe the development of device models and tools for the design of the carbon nanotube FET (CNFET). Both HSPICE model and Verilog-A model for CNFET including typical device/circuit level non-idealities have been developed. They can be used for design of nanotube transistor circuits as well as to study performance benefits of the new transistor.

ABSRACT We have used a number of methods to grow long aligned single-walled carbon nanotubes. Geometries include individual long tubes, dense parallel arrays, and long freely suspended nanotubes. We have fabricated a variety of devices for applications such as multiprobe resistance measurement and high-current field effect transistors. In addition, we have measured conductance of single-walled ...

The attachment of semiconducting nanoparticles to carbon nanotubes is one of the most challenging subjects in nanotechnology. Successful high coverage attachment and control over the charge transfer mechanism and photo-current generation open a wide field of new applications such as highly effective solar cells and fibre-enhanced polymers. In this work we study the charge transfer in individual...

We present a simple and scalable fluidic-assembly approach, in which bundles of single-walled carbon nanotubes (SWCNTs) are selectively aligned and deposited by directionally controlled dip-coating and solvent evaporation processes. The patterned surface with alternating regions of hydrophobic polydimethyl siloxane (PDMS) (height ~ 100 nm) strips and hydrophilic SiO2 substrate was withdrawn ver...