A chalcogenide glass capable of infrared transmission which is either sulfur, selenium or tellurium based and consists of compositions of the formula MX+M.sub.2 'X.sub.3 +SiX.sub.2, wherein M is one of the metals calcium, strontium, barium, zinc and lead, and M' is either aluminum or gallium and X is either sulfur, selenium or tellurium. Aluminum or gallium chalcogenide acts to increase the cov...

Double-crucible cane fabrication of highly purified chalcogenide-glass was combined with multimaterial thermal fiber drawing to produce robust low-loss 0.2 NA chalcogenide fibers. Optical transmission losses were shown to be less than 1.1 dB/m at wavelengths of 1.5, 2.0 and 4.6 μm. Fiber transmission > 97% at the 1.5 μm design wavelength was demonstrated using single-layer anti-reflection coati...

We report on buried planar waveguides in a highly nonlinear infrared transmitting chalcogenide glass, fabricated using a combination of inverted deposition of the molten glass phase and high-velocity spinning. Films of gallium lanthanum sulphide sGa:La:Sd glass were deposited onto an expansion coefficient matched Ga:La:S cladding substrate. These amorphous films, with an optimized composition d...

Ternary chalcogenide glass films from identical parent bulk glasses were prepared by thermal evaporation (TE) and pulsed laser deposition (PLD) and subjected to 810-nm femtosecond laser exposure at both kHz and MHz repetition rates. The exposure-induced modification on the glass film's surface profile, refractive index, and structural properties were shown to be a function of laser irradiance, ...

The focus of this work is on the formation of a lithography-free redox conductive bridge memristor array, comprised of different compositions of GexSe1−x chalcogenide glasses with the aim of selecting the chalcogenide material that provides the best performance. Various memristive arrays were fabricated on a metal–chalcogenide–metal stack. This structure offers high device density with the simp...

The focus of this work is on the formation of a lithography-free redox conductive bridge memristor array, comprised of different compositions of GexSe1−x chalcogenide glasses with the aim of selecting the chalcogenide material that provides the best performance. Various memristive arrays were fabricated on a metal–chalcogenide–metal stack. This structure offers high device density with the simp...

Solution-processing of chalcogenide glass materials has many benefits for the fabrication of photonic devices. We report on the structural properties of Ge23Sb7S70 glass during solution-processing. The molecular and micro-structure of the bulk glass and the n-propylamine solution, as well as the spincoated thin films and post-irradiated films are analyzed by Raman spectroscopy, scanning electro...

A chalcogenide-assisted silicon waveguide is realized by depositing a thin layer of A(2)S(3) glass onto a conventional silicon on insulator optical waveguide. The photosensitivity of the chalcogenide is exploited to locally change the optical properties of the waveguide through exposure to visible light radiation. Waveguide trimming is experimentally demonstrated by permanently shifting the res...

An original way to obtain fibers with special chromatic dispersion and single-mode behavior is to consider microstructured optical fibers (MOFs). These fibers present unique optical properties thanks to the high degree of freedom in the design of their geometrical structure. In this study, the first all-solid all-chalcogenide MOFs exhibiting photonic bandgap transmission have been achieved and ...

High brightness mid-IR sources have matured and are becoming viable solutions to many medical, defense, and sensing demands. Recently, super-continuum from 3.6-4.8μm with an average power of 22W has been demonstrated using a ZGP optical parametric oscillator [1]. To fully utilize the power and bandwidth of sources like these, passive optical components possessing both high optical and high ther...