Sugar alcohols have been recently under investigation for their use as phase change materials in long-term heat storage systems. The thermal performances in such systems are strongly dominated by the nucleation and crystal growth kinetics, which on their turn are linked to the crystal-melt interfacial free energy γSL. We report a novel technique using first principle calculations to accurately ...

Implicit in most large-scale numerical analyses of the crystal growth from the melt is the assumption that the shape and position of the phase boundary are determined by the transport phenomena coupled strongly to the melt hydrodynamics. In the present numerical study, the interface shape-effect on the convective interactions in a Czochralski oxide melt is described. It was demonstrated that th...

Abstract A fundamental understanding of crystal growth dynamics during directional solidification multicrystalline Si (mc-Si) is crucial for the development technology mc-Si ingots use in solar cells. In situ observation crystal/melt interface a way to obtain direct evidence phenomena that occur at moving growth. this review, some occurring processes are introduced based on our experiments, aft...

The growth of quasicrystals, i.e., aperiodic structures with long-range order, seeded from the melt is investigated using a dynamical phase field crystal model. Depending on the thermodynamic conditions, two different growth modes are detected, namely defect-free growth of the stable quasicrystal and a mode dominated by phasonic flips which are incorporated as local defects into the grown struc...

The effect of an insulation lid on the growth 4-inch β-Ga2O3 single crystals by Czochralski method is analyzed numerical simulation. mainly hinders upward radiant heat transfer from melt and crucible increases axial temperature gradient in crystal. Such benefits make melt/crystal interface convex, which conducive to suppressing spiral growing large with high quality. Materials low thermal condu...

Poly(vinylidene fluoride-co-tetrafluoroethylene) (PVDF-TFE) is confined between alternating layers of poly(ethylene terephthalate) (PET) utilizing a unique multilayer processing technology, in which PVDF-TFE and PET are melt-processed in a continuous fashion. Postprocessing techniques including biaxial orientation and melt recrystallization were used to tune the crystal orientation of the PVDF-...

For verification of numeric methods and development of experimental benchmarks for 2D and 3D models of heat and mass transfer in crystal growth, the experimental AHP setup based on a novel AHP crystal growth method is designed to conduct experiments with NaNO3 and ice. It is equipped with PIV and PVT visualizations systems to provide finding of field of flow velocity and temperature distributio...

With rapid solidification following pulsed laser melting, we have measured the dependence on interface orientation of the amount of solute trapping of several group III, IV, and V elements (As, Ga, Ge, In, Sb, Sn) in Si. The aperiodic stepwise growth model of Goldman and Aziz accurately fits both the velocity and orientation dependence of solute trapping of all of these solutes except Ge. The s...

GdFe 3 (BO ) 4 , single crystals were grown from melt-solutions based on bismuth trimolybdate and lithium tungstate. Single of gadolinium ferroborate lithium-tungstate solution-melt for the first time. The magnetic properties are compared. It is shown that obtained using contains impurities Bi 3+ ions (6% at.), which replace Gd ions. Whereas a tungstate does not seem to contain such uncontrolle...