Single crystals of GdCa4O(BO3)3 were examined to determine their thermal properties. Samples were grown by the Czochralski pulling technique. There were three types of samples: a pure crystal, the crystal doped with neodymium (4 at.% of Nd), and the third one doped with ytterbium (7 at.% of Yb). All samples were rectangular prisms with edges parallel to the axes of the optical indicatrix X, Y ,...

w The dual implantation method developed for defect engineering O.W. Holland, L. Xie, B. Nelson, D.S. Zhou, J. Ž . x q Electron. Mater. 25 1996 99 uses an amorphizing implant in conjunction with high energy Si -ion implantation to inject vacancies. Following annealing of the implanted samples for 20 min at 6008C and at 8008C, the amorphous layer Ž . recrystallizes by solid-phase epitaxial growt...

Rare-earth tantalates, with high density and monoclinic structure, and niobates with monoclinic structure have been paid great attention as potential optical materials. In the last decade, we focused on the crystal growth technology of rare-earth tantalates and niobates and studied their luminescence and physical properties. A series of rare-earth tantalates and niobates crystals have been grow...

Modeling of heat transfer is presented for the entire Czochralski Si-growth furnace. The axisymmetric steady-state approach with moving computational grids is used. Melt turbulent flow, inert gas flow, heat transfer in solid parts, and radiative heat transfer in the system are considered. The Reynolds-averaged Navier-Stokes equations written with the Boussinesq approximation and the energy equa...

The calculation of conductivity electron concentrations in n -GaSb at T = 295 K and 77 have been made. concentration “heavy” electrons the L-valley conduction band Т has shown to exceed “light” one Γ-valley. On contrary, are gathered Γ-valley.The results Hall measurements made on tellurium-doped samples n-GaSb obtained by Czochralski method represented. It that upon analysing data K, it is nece...