FinFET and UTBSOI (or ETSOI) FET are the two promising multi-gate FET candidates for sub-22nm CMOS technology. The BSIM-CMG and BSIM-IMG are the surface potential based physical compact models for multi-gate MOSFETs. The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. The BSIM-IMG model has been developed to model independent doubl...

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar...

The emergence of fin-shaped field effect transistors (FinFETs) was governed by the requirement VLSI industry to include more functionalities per unit chip area. Enhanced gate control in a FinFET due surrounding architecture built on fundamental geometry MOSFET made them highly compatible existing CMOS circuit applications. announcement vertically stacked multiple structure named as Ribbon-FET I...

In this paper, a two-dimensional analytical model of laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting SiO2 and HfO2 is derived. The illustrates higher drive current better performance against hazardous SCEs HCEs in below 30 nm regime. Parabolic approximation method used here to construct channel potentials ...

This paper shows that the Surrounding Gate Transistor (SGT) can be scaled down to decananometer gate lengths by using an intrinsically-doped body and gate work function engineering. Strong gate controllability is an essential characteristics of the SGT. However, by using an intrinsically-doped body, the SGT can realize a higher carrier mobility and stronger gate controllability of the silicon b...

A multi-nanosheet field-effect transistor (mNS-FET) device was developed to maximize gate controllability while making the channel in form of a sheet. The mNS-FET has superior for stacked channels; consequently, it can significantly reduce short-channel effect (SCE); however, punch-through inevitably occurs bottom portion that is not surrounded by gates, resulting large leakage current. Moreove...

In this research work, a Cylindrical Surrounding Double-Gate (CSDG) MOSFET design in stacked-Dual Metal Gate (DMG) architecture has been proposed to incorporate the ability of gate metal variation channel field formation. Further, internal gate's threshold voltage ( V TH1 ) could be reduced compared external TH2 by arranging work-function Double devices. Therefore, device CSDG realized instigat...

The integrity and issues related performance associated with scaling Si MOSFET channel length promotes research in new device SOI, double gate and GAA MOSFET. In this paper, we pr novel characteristic of horizontal rectangular gate MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some para...

This work presents an Improved Charge Sheet compact Model (ICSM) especially valuable for distortion analysis, where precise calculation of derivatives of at least third order is required. A new expression for the charge is used in the calculation of the current. Vertical electric field, mobility and DIBL are represented using previously reported for other purposes more precise expressions. The ...