Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed.  The p...

We study the strong-coupling (SC) interaction between two like-charged membranes of finite thickness embedded in a medium of higher dielectric constant. A generalized SC theory is applied along with extensive Monte Carlo simulations to study the image charge effects induced by multiple dielectric discontinuities in this system. These effects lead to strong counterion crowding in the central reg...

Present work describes the formation of α-Fe2O3@SiO2 core shell structure by systematic layer by layer deposition of silica shell on core iron oxide nanoparticles prepared via various solvents. Sol-gel method has been used to synthesize magnetic core and the dielectric shell. The average crystallite size of iron oxide nanoparticles was calculated ∼20 nm by X-ray diffraction pattern. Morphologic...

A constant current charge/discharge protocol which showed fumed silica filled to the point of incipient wetness with aqueous NaCl solution to have dielectric constants >10⁸ over the full range of dielectric thicknesses of 0.38-3.9 mm and discharge times of 0.25->100 s was studied, making this material another example of a superdielectric. The dielectric constant was impacted by both frequency a...