Optical packet switching has received considerable attention over the last few years. In this paper we discus how optical signal processing can play a role in photonic packet routing. Two examples are given. Firstly we discuss ultrafast wavelength switching at 160 Gbit/s in a single semiconductor optical amplifier. Secondly, an integrated photonic flip-flop is discussed. Finally a discussion is...

We report a monolithic photonic integrated circuit (PIC) for THz communication applications. The PIC generates up to 4 optical frequency lines which can be mixed in a separate device to generate THz radiation, and each of the optical lines can be modulated individually to encode data. Physically, the PIC comprises an array of wavelength tunable distributed feedback lasers each with its own elec...

The parameters of an encapsulated semiconductor optical amplifier (SOA) are obtained by a proper extraction algorithm using a technique based both on measurements and modeling. The theoretical model is based on rate equations and the experiments use continuous wave optical gain curves measured for different injected currents and optical input powers. The algorithm analyses the derivatives of th...

We propose a simple and cost-effective method, using direct frequency modulation (FM) noncoherent detection (NCD) scheme, to suppress the nonlinear optical effects in dense wavelength division multiplexed (DWDM) communication. The FM transmitter comprises directly modulated distributed feedback laser saturable semiconductor amplifier. In NCD receiver, an slope filter as intensity (IM) signal co...

The design of a 50 0 impedance matched two-tofour level converter GaAs IC for two-electrode semiconductor optical amplifier (SOA) modulators is presented. The designed IC exhibits eye diagrams with eye openings of better than 0.30 V and a spacing between adjacent output signal levels of 0.33 V for output symbol rates of up to 2 Gsym.boVs corresponding to input bit rates of up to 4 Gb/s. A novel...

All-Optical Re-amplification and Re-shaping (2R) exploiting spectral shift induced by Self-Phase-Modulation (SPM) in a Semiconductor Optical Amplifier (SOA) is presented. Theoretical model taking into account Carrier Density (CD), Carrier Heating (CH) and Spectral Hole Burning (SHB) is experimentally validated using 3 ps optical pulses.

Optical amplifiers are important elements of photonic integrated circuits. We present a hybrid silicon evanescent amplifier utilizing a wafer bonded structure of silicon waveguide and AlGaInAs quantum wells. A chip gain of 13 dB with a power penalty of 0.5 dB at 40 Gb/s data amplification is demonstrated. ©2006 Optical Society of America OCIS codes: (250.5980) Semiconductor optical amplifiers; ...