Irradiation effects on the wide-bandgap semiconductor material GaN are of interest to the USAF due to this material’s applicability for a wide range of on-orbit uses. Irradiation is also a valuable tool in analyzing the damage and defect formation dynamics of the material which is of great use in determining and correcting deficiencies in material growth processes. GaN samples representing seve...

A comprehensive study of the crystal and electronic structures, thermodynamic, electrokinetic, energy, magnetic properties semiconductive solid solution Lu1-xScxNiSb, x = 0 – 0.10, revealed possibility doping Sc atoms different crystallographic sites depending on their concentration. This leads to generation structural defects donor and/or acceptor nature appearance corresponding energy levels ...

S. Y. Savrasov,1 V. Oudovenko,2,5 K. Haule,3,5 D. Villani,4,5 and G. Kotliar5 1Department of Physics, New Jersey Institute of Technology, Newark, New Jersey 07102, USA 2Laboratory for Theoretical Physics, Joint Institute for Nuclear Research, 141980 Dubna, Russia 3Jožef Stefan Institute, SI-1000 Ljubljana, Slovenia 4JP Morgan Chase Bank, 270 Park Avenue, New York, New York 10017, USA 5Departmen...

The two-channel Anderson impurity model serves as a prototype for describing heavy-fermion materials with a possible mixed-valent regime with both quadrupolar and magnetic character. We report on the low-energy physics of the model, using a conformal field theory approach with exact Bethe Ansatz results as input.

By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field measurements (H = +/-90 kOe) showed non-linear resistance for T < 150 K revealing two-band conduction. Further analyses revealed carrier freeze-out characteristics both bands yiel...

Interstitial magnesium acts as a moderately deep double donor in silicon, and is relatively easily introduced by diffusion. Unlike the case of chalcogen donors, parameters even-parity valley-orbit excited states 1s(T 2 ) 1s(E) have remained elusive. Here we report on further study these neutral through temperature dependence absorption measurements. The results demonstrate thermal activation fr...

Abstract A HgCdTe photodiode grown by chemical vapor deposition (MOCVD) on a GaAs substrate operating in the long-wave infrared (LWIR) range was characterized using photoluminescence (PL) measurements. At high temperatures, PL spectrum originates from free-carrier emission and might be fitted theoretical expression being product of density states Fermi–Dirac distribution. low consists multiple ...

We consider a strongly correlated ladder with diagonal hopping and exchange interactions described by t − J type hamiltonian. We study the dynamics of a single hole in this model in the presence of a static non-magnetic (or magnetic) impurity. In the case of a non-magnetic (NM) impurity we solve the problem analytically both in the triplet (S=1) and singlet (S=0) sectors. In the triplet sector ...

In this paper, we study the effect of single Boron/Nitrogen impurityatom on electronic properties of a silicene nano flake. Our calculations are basedon density functional theory by using Gaussian package. Here, one Si atom insilicene nano flake substitutes with a Boron/Nitrogen atom. The results show thatsubstitution of one Si atom with single Boron/Nitrogen atom increases distanceof impurity ...