Within the last decade, silicon drift detectors (SDD) systems have become more and more popular in the field of energy-dispersive spectroscopy (EDS). The main characteristic of the SDDs is their extremely high pulse load capacity of up to 750,000 counts per second at good or reasonable energy resolution (<123 eV Mn-Kα, <46 eV C-Kα at 100,000 cps). These properties in conjunction with electron b...

We have characterized elastic strain fields associated with the wet-thermal oxidation of buried AlxGa1-xAs (x ~ 0.98) layers of thickness 80 nm, situated between GaAs layers of thickness 200 nm, on a GaAs substrate. The compressive strains accompanying oxidation can exceed 6% and may lead to interlayer delamination or fracture. Automated electron backscatter diffraction measurements were perfor...

The minimum amount of geometrically necessary dislocations (GND) required to create crystallographic orientation gradients near the grain boundaries in a uniaxially deformed <001> columnar aluminum specimen is computed from local orientation measurements obtained using electron backscattered diffraction patterns (EBSD). Plots correlating GND density and orientation gradient are presented.

A monolithic active pixel sensor based direct detector that is optimized for the primary beam energies in scanning electron microscopes implemented back-scattered diffraction (EBSD) applications. The high detection efficiency of and its large array pixels allow sensitive accurate Kikuchi bands arising from excitation 4 keV to 28 keV, with optimal contrast occurring range 8–16 keV. pattern acqui...