Metal halide perovskites such as methylammonium lead iodide (MAPbI3) are highly promising materials for photovoltaics. However, the relationship between the organic nature of the cation and the optoelectronic quality remains debated. In this work, we investigate the optoelectronic properties of fully inorganic vapour-deposited and spin-coated black-phase CsPbI3 thin films. Using the time-resolv...

Articles you may be interested in Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors Appl. Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors Appl. Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors Appl. D...

Silicon wafers implanted with low doses of manganese were annealed at 900 ◦C to distribute the Mn throughout the sample volume, and were subjected to carrier lifetime measurements. The Mn centres thus introduced were found to decrease the recombination lifetime in both nand p-type silicon, although the impact was greater in p-type silicon for resistivities near 1 cm. For both pand n-type sample...

We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the continuous-wave PL intensity is observed o...

Advisor Department Head iii ABSTRACT OF DISSERTATION Impact of Lifetime Variations and Secondary Barriers on CdTe Solar-cell Performance The thin-film CdTe solar cell (generally n-CdS/p-CdTe) is one of the leading candidates for terrestrial photovoltaic applications due to its low cost and high efficiency. However, compared with single-crystal cells of comparable band gap, there remains a signi...

A bstract We consider the $$ {B}_s^0 B s 0 → μ + − γ effective lifetime, and related CP-phase sensitive quantity {A}_{{\Delta \Gamma}_s}^{\mu \mu \gamma} A ΔΓ μμγ , as a way...

Significantly improved carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattice (SL) absorbers are demonstrated by using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb SL structure that produces an approximately 25 μm response at 10 K has a minority carrier lifetime of 140 ± 20 ns at 18 K, which is an order-of-magni...

Abstract Cu(In,Ga)S2–based solar cells have been shown by Hiroi et al (Hiroi 2015 IEEE Journal of Photovoltaics 6 309–312) to achieve higher efficiencies with absorbers processed at high deposition temperatures. Additionally, it is known for CuInS 2 that the main improvement from temperatures reduction in density deep defects and increased quasi-Fermi level splitting. The splitting could result...

The ambipolar diffusion length and the minority-carrier mobility-lifetime products of microcrystalline hydrogenated germanium thin films, prepared by plasma enhanced chemical vapour deposition, are investigated by using the steady-state photocarrier technique. Different thin film samples were deposited with the dilution of the process gases, germane in hydrogen, GC = [GeH4]/[H2], between 0.2% t...