This paper demonstrates, for the first time, enhancement mode antimonide MOSFETs by integrating a composite highgate stack (3nm Al2O3-1nm GaSb) with ultrathin InAs0.7Sb0.3 QW (7.5nm). The MOSFET exhibits record high electron drift mobility of 5200 cm2/Vs at a carrier density (Ns) of 1.8x1012cm-2, sub-threshold slope of 150mV/decade, ION-IOFF ratio of ~4000x within a voltage window of ~1V, high ...

The degradation of thin tunnel gate oxide under constant Fowler–Nordheim (FN) current stress was studied using flash EEPROM structures. The degradation is a strong function of the amount of injected charge density (Qinj), oxide thickness, and the direction of stress. Positive charge trapping is usually dominant at low Qinj followed by negative charge trapping at high Qinj, causing a turnaround ...

We have carried out an experimental study exploring both impact ionization and electron transport in InAlAs/n+-InP HFET’s. Our devices show no signature of impact ionization in the gate current, which remains below 17 p ” m under typical bias conditions for L, = 0.8 pm devices (60 t i e s lower than for InAlASnnGaAs HEMT’s). The lack of impact ionization results in a drain-source breakdown volt...

The breakdown of an overvoltage protection structure is analyzed in the temperature range from 298 to 523 K. The avalanche generation rates are modeled as a function of the carrier and lattice temperature. The generation rates are proportional to the carrier concentration. Careful attention is given to the pre-breakdown regime and to the breakdown process. The importance of various generation p...

Triply-differential cross sections for K-shell ionization by fast electron impact are calculated within the first-order Coulomb Born approximation for the case of a coplanar symmetric geometry. Comparison is made with experimental data on 300 keV and 500 keV eC+Cu, Agand Au. Far the two lightertargetr, the binarypeakregion is reasonably well described by a theory which uses semirelativistic ele...