Power devices are widely used for the power handling portion of the electronic devices for space systems as well as ground-based commercial devices. In our previous study, we investigated the fatal destruction mode called single-event effects (SEEs) in the SiC schottky barrier diode (SiC-SBD) and SiC metal-oxide-semiconductor field-effect transistor (SiC-MOSFET). SiC is expected to be a candida...

This paper examines the edge direct tunneling (EDT) of electron from n polysilicon to underlying n-type drain extension in off-state n-channel MOSFET’s having ultrathin gate oxide thicknesses (1.4–2.4 nm). It is found that for thinner oxide thicknesses, electron EDT is more pronounced over the conventional gate-induced-drain-leakage (GIDL), bulk band-to-band tunneling (BTBT), and gate-to-substr...

Submitted for the MAR08 Meeting of The American Physical Society Fabrication and characterization of InAs/AlGaSb HEMTs with high-k gate insulators TOSHIHIKO MAEMOTO, KENJI FUJIWARA, TATSUYA INOUE, NAOKI AMANO, MASATOSHI KOYAMA, SHIGEHIKO SASA, MASATAKA INOUE, OSAKA INSTITUTE OF TECHNOLOGY TEAM — We report on the fabrication and characterization of InAs/AlGaSb high electron mobility transistors ...

3-Acetyl-5-isopropyltetramic acid (3-AIPTA), a derivate of tetramic acid, is responsible for brown leaf-spot disease in many plants and often kills seedlings of both mono- and dicotyledonous plants. To further elucidate the mode of action of 3-AIPTA, during 3-AIPTA-induced cell necrosis, a series of experiments were performed to assess the role of reactive oxygen species (ROS) in this process. ...

Futile cycling of protons across the mitochondrial inner membrane accounts for 20 % or more of the total standard metabolic rate of a rat. Approximately 15 % of this total is due to proton leakage inside the skeletal muscle alone. This study examined whether the rate of proton leak is down-regulated as a part of a coordinated response to energy conservation during metabolic depression in cold-s...

We designed acene molecules attached to two semi-infinite metallic electrodes to explore the source-drain current of graphene and the gate leakage current of the gate dielectric material in the field-effect transistors (FETs) device using the first-principles density functional theory combined with the non-equilibrium Green's function formalism. In the acene-based molecular junctions, we modify...

We analyze efficiency droop reductions in InGaN/GaN light-emitting diodes caused by a chirped AlGaN/GaN multi-quantum barrier (MQB). Such electron barriers are expected to create an additional forbidden energy range above the natural conduction band edge, which reduces the electron leakage current. Advanced numerical device simulations reveal that energy band bending practically eliminates this...

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown ...

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