We report the characterization of aluminum oxide (Al2O3) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge...

Turbulent mixed convection in an air-water system is evaluated with a novel numerical solver implementing the stochastic One-Dimensional Turbulence (ODT) model turbulent air flow surrounded by laminar cocurrent water falling film cylindrical geometry. The ODT used as reduced order surrogate for effects of advection, heat flux, and mass-flux within one-dimensional domain. An ad-hoc temporal-to-s...

We proposed the flexible thermoelectric generator (TEG) using double side FPCB (flexible printed circuit boards). The proposed flexible thermoelectric generator has the unique vertical structure. The heat of the flexible thermoelectric generator flows vertically via plated through hole (PTH). The n-type (Bi-Te) and p-type (Sb-Te) thin films are deposited by the co-evaporator and patterned using...

A model of a rotary film evaporator with film-forming element reflective heated surface has been developed. This will allow stabilizing the hydraulic movement cut wave flow due to geometric shape for forced direction raw material heating surface. Autonomous additionally provides temperature effect in conditions particles materials after cutting. The analysis experimental and theoretical paramet...

Anatase phase containing nano-crystallite TiO2 thin film is prepared by the peptization of modified Ti-isopropoxide sol using HNO3 as peptizing agent. The resulting sol is concentrated in a rotary evaporator bath. TiO2 film is deposited on ITO substrate by spin coating process. The compact film is annealed at 450 ̊C and 500 ̊C for optical studies. The subsequently it is modified as photo-anodes i...

We have designed and constructed a thin film preparation chamber with base pressure of $<2 \times 10^{-9}$~mbar. Currently, the is equipped two large area evaporators (a molecular evaporator an electron-beam evaporator), ion sputtering gun, thickness monitor substrate heater. It such that it can handle samples future possibility to transfer them in vacuum directly low energy muons (LEM) spectro...

h = heat transfer coefficient q = heat flux from the wall of evaporator to refrigerant Tw =Temperature at the wall of evaporator Tf = Temperature of the refrigerant kal = Conductivity of aluminum t = Thickness of evaporator M& = Mass flow rate of refrigerant Cp = Constant-pressure specific heat of refrigerant Tsat = Saturation temperature of refrigerant Tin = Temperature of refrigerant at inlet...