1 Research Scholar of Sagar Institute of Research & Technology, Bhopal, Madhya Pradesh, India 2 Professor, Dept. of Electronics and Communication, Sagar Institute of Research & Technology, Bhopal, Madhya Pradesh, India. __________________________________________________________________________________________ Abstract: Scaling of devices in bulk CMOS technology contributes to short channel effe...

In this study, we developed a facilitated ferroelectric high-k/metal-gate n-type FinFET based on Hf0.5Zr0.5O2. We investigated the impact of hysteresis effect device characteristics various fin-widths and degradation induced by stress (Fe-FinFET). clarified electrical conducted related reliability inspections. For Fe-FinFET, behavior Hf0.5Zr0.5O2-based gate stack in Si-fin body is apparent, esp...

Among multi-gate field effect transistor (FET) structures, FinFET has better short channel control and ease of manufacturability when compared to other conventional bulk devices. The radio frequency (RF) performance of FinFET is affected by gate-controlled parameters such as transconductance, output conductance, and total gate capacitance. In recent years, high-k spacer dielectric materials for...

چکیده: در ایـن مقاله طراحی یک مبدل زمان به دیجیتال 12 بیتی رزولوشن بالا و توان مصرفی کم مبتنی بر اسیلاتور حلقوی چند­مسیره (multi-path gated ring oscillator) در تکنولوژی nm-cmos130 بیان شده است. برای افزایش رزولوشن دو مسیر گیت با رزولوشن­های متفاوت، رزولوشن درشت و رزولوشن ریز، به­صورت ساختار ورنیر استفاده شده است. تأخیر گیت هر مسیر تعیین­کننده رزولوشن آن مسیر و به دلیل به ­کار بردن آن­ها در ساخت...

Recent experimental studies reveal that FinFET devices commercialized in recent years tend to suffer frommore severe NBTI degradation compared to planar transistors, necessitating effective techniques on processors built with FinFET for endurable operations. We propose to address this problem by exploiting the device heterogeneity and leveraging the slower NBTI aging rate manifested on the plan...

In the world of Integrated Circuits, Complementary Metal–Oxide– Semiconductor (CMOS) has lost its credentiality during scaling beyond 32nm. Scaling causes severe Short Channel Effects (SCE) which are difficult to suppress. As a result of such SCE many alternate devices have been studied. Some of the major contestants include Multi Gate Field Effect Transistor (MuGFET) like FinFET and Carbon Nan...

Industry demands Low-Power and HighPerformance devices now-a-days. Among the various embedded memory technologies, SRAM provides the highest performance along with low standby power consumption. In CMOS circuits, high leakage current in deep-submicron regimes is becoming a significant contributor to power dissipation due to reduction in threshold voltage, channel length, and gate oxide thicknes...

Sub-threshold leakage and process-induced variations in bulk-Si technology limit the scaling of SRAM into sub-32 nm nodes. New device architectures are being considered to improve control Vt and reduce short channel effects. Among the likely candidates, FinFETs are the most attractive option because of their good scalability and possibilities for further SRAM performance and yield enhancement t...

هدف: پیشرفت جوامع بالاخص کشورهای درحال توسعه تا حد زیادی در گرو گسترش نهادهای دانشگاهی است. هم‌چنین یکی از مهم‌ترین ویژگی‌های آموزشی، درهم‌تنیدگی ساختارهای آموزش و اشتغال واقع هر آموزشی باید بازدهی یا توجیه اقتصادی داشته باشد که عالی‌ترین نوع آن ایجاد متناسب با فراگیر بر این اساس پژوهش حاضر به بررسی وضعیت راهیابی دانشجویان فارغ‌التحصیلان کارشناسی ارشد دکتری رشته تکنولوژی بازار کار عوامل مؤثر نظ...