To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the con...

Diamond thin films grown on high resistivity, (100) oriented silicon substrates by the hot filament chemical vapor deposition (HFCVD) method have been characterized by four-point probe and current-voltage (through film) techniques. The resistivities of the as-grown, chemically etched and annealed samples lie in the range of 1 O* fl cm to 10’ 0 cm. The Raman measurements on these samples indicat...

In this paper we examine the absorption and dispersion properties of a weak probe field via Electromagnetically Induced Transparency (EIT) in a four-level system. It is shown that under certain condition, using this model, the absorption cancellation is appeared and the medium becomes transparent to the weak probe field. It will be shown that the controlling of absorption and dispersion spectru...

Several strong convergence results involving two distinct four parameter proximal point algorithms are proved under different sets of assumptions on these parameters and the general condition that the error sequence converges to zero in norm. Thus our results address the two important problems related to the proximal point algorithm − one being of strong convergence (instead of weak convergence...

The Four Functionals Fixed Point Theorem is a generalization of the original, as well as the functional generalizations, of the Leggett–Williams Fixed Point Theorem. In the Four Functionals Fixed Point Theorem, neither the upper nor the lower boundary of the underlying set is required to map below or above the boundary in the functional sense. As an application, the existence of a positive solu...