The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 〈111〉, 〈100〉, and 〈110〉 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmosphe...

In order to implement an integrated optical quantum circuit, designing waveguides based on the quantum box is of prime importance. To do this we have investigated optical waveguide both with and without optical pumping. The rate of absorption and emission using an array of AlGaAs/GaAs quantum box core/shell structure in the optical waveguide with various pumping intensities has computed. By con...

Computational studies of atomic assembly processes during GaAs vapor deposition require interatomic potentials that are able to reasonably predict the structures and energies of a molecular arsenic vapor, a variety of elemental gallium and arsenic lattices, binary GaAs lattices, GaAs lattice defects, and 001 GaAs surfaces. These properties were systematically evaluated and compared to ab initio...

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II ...

The stability of a GaAs layer structure consisting of a thin ~10 nm! layer of low-temperature-grown GaAs on a heavily n-doped GaAs layer, both grown by molecular beam epitaxy, has been studied using a scanning tunneling microscope. The sample was exposed to the atmosphere between the layer growth and STM characterization. Tunneling spectroscopy shows both the GaAs band edges and a band of midga...

The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical cavity semiconductor optical amplifier (VCSOA) is a modified version of a HELLISH-VCSOA device. It has a shorter p-channel and longer n-channel. The device studied in this work consists of a simple GaAs p-i-n junction, containing 11 Ga0.35In0.65 N0.02As0.08/GaAs multiple quantum wells in its i...

The authors present a method for obtaining graphitized carbon on GaAs 100 surfaces. Carbon-doped GaAs is grown by molecular beam epitaxy before controlled thermal etching within the growth chamber. An AlAs layer beneath the carbon-doped GaAs acts as a thermal etch stop. As the GaAs is etched away, the carbon dopant atoms remain on the surface due to their low vapor pressure. The total number of...

We have carried out van der Pauw resistivity and Hall effect measurements on a series of Molecular Beam Epitaxy InAs/GaAs superlattice samples containing InAs quantum dots. Three growth parameters were varied, the InAs coverage, the number of repetitions of the InAs/GaAs layers, and the GaAs spacer thickness. The results can be grouped in two sets, those samples presenting low and high resistiv...

We demonstrate annealed low-temperature grown ~LTG! GaAs to be a highly effective etch-stop layer while photoetching n-type normal-growth-temperature GaAs. During this process, the etch rate is controlled by the transport of photogenerated carriers to the semiconductor/electrolyte interface. Because of the very short minority carrier lifetime in LTG-GaAs, only a very small portion of photogener...

Atomic layer deposition ALD grown Al2O3 has excellent bulk and interface properties on III-V compound semiconductors and is used as gate dielectric for GaAs and GaN metal-oxide-semiconductor field-effect transistors MOSFETs . The low-temperature LT ALD technology enables us to fabricate 100 nm MOS structures on GaAs, defined by nanoimprint lithography. The electrical characterization of these n...