A proof-of-concept metal–insulator–semiconductor (MIS) AlGaN/GaN high-electron mobility transistor (HEMT) that uses a self-aligned 10 nm AlOx gate insulator and SiNx passivation in the device access regions was investigated. Self-alignment of the gate insulator to metal was achieved by utilizing a submicron tri-layer photoresist pattern to lift-off sequentially-deposited AlOx dielectric and Ni/...

This paper discusses the electrical properties of the complementary heterojunction field-effect transistor (CHFET) at 4 K, induding the gate leakage current, the subthreshold transconductance, and the input-referred noise voltage. The CHFET is a GaAs-based transistor analogous in structure and operation to silicon CMOS, and is being explored for possible application in readout electronics opera...

This letter describes a replacement (damascene) metal gate NMOSFET with TaSiN and PVD TaN as stacked gate electrode. The goal is to perform the “gate electrode engineering” in order to change the work function and the threshold voltage of the transistor. An annealing at 400°C after the metal gate is formed significantly improves the transistor performance. The subthreshold slope is measured to ...

As the size of a transistor continuously scales down, single electron effects become important [1 – 3]. Previously, we have studied charge transport in single-electron quantum dot transistors which have a channel consisting of a silicon dot separated from the source and the drain by two constrictions [4], and in single-electron MOS memories that have a polysilicon dot floating gate stacked on a...

Low-field mobilities for electrons in the channel of an Al0.15Ga0.85N/GaN heterostructure field-effect transistor are derived from direct current transistor characteristics. The dependencies of mobility on gate bias, sheet carrier concentration, and temperature are obtained. For negative gate bias voltages, mobility is found to increase monotonically with increasing sheet carrier concentration,...

The low-frequency 1/f noise characteristics of AlGaN/GaN high-electron-mobility transistors with gate length scaled down to 150 nm grown on sapphire by metalorganic chemical vapor deposition have been studied. Certain features of the 1/f noise have been revealed in these short-gate transistors. The low-frequency noise spectra show drastically different behavior depending on the gate voltage VG ...

The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring, while a gate modulating wire is a conjugated wire. The calculated results show the enhancement or depletion mode of a transistor by applying a gate field a...

We have demonstrated a room-temperature silicon single-electron transistor memory that consists of ~i! a narrow channel metal-oxide–semiconductor field-effect transistor with a width ~;10 nm! smaller than the Debye screening length of single electron; and ~ii! a nanoscale polysilicon dot ~;737 nm! as the floating gate embedded between the channel and the control gate. We have observed that stor...

A theoretical description of gate tunnel current in an MOS transistor is proposed, and the results of calculations for the case of an n-channel MOSFET with extremely thin gate oxides are given. A comparison of the gate tunnel current with the drain current is made.

In this study, a three-dimensional “atomistic” circuitdevice coupled simulation approach is advanced to investigate the process-variation and random dopant induced characteristic fluctuations in planar metal-oxidesemiconductor field-effect-transistor (MOSFET) static random access memory (SRAM) from 65-nm to 16-nm gate length. As the gate length of the planar MOSFETs scales from 65 nm to 16 nm, ...