This letter reports the phenomenon of current drops in an AlGaN/GaN heterojunction with CF4 plasma treated a polar gas ambient. Ungated HEMT treatment was tested ethanol, acetonitrile, and acetic acid ambient, dropped by 52%, 51% 61%, respectively, which are much higher than (6%, 7%, 8%) normal ungated HEMT. On one hand, based on “ambient doping”, possible model proposed to explain this phenome...

High electron mobility transistors with InAs channels and sub 0.1m metal gates, have demonstrated a 100% improvement in low-power, high-speed figure of merits over conventional InAlAs/InGaAs lattice-matched HEMTs and MHEMTs. AlSb/InAs MHEMTs exhibit transconductances as high as 1.3 S/mm at drain biases as low as 0.3 V, while maintaining fT and fmax results greater than 220 GHz and 270 GHz, resp...

Emerging adults (EA, 18 to 25 years of age) with CF (EA-CF) experience changes in sleep and life transitions, while also managing a complex chronic illness, but few programs regularly screen for disorders. Highly effective modulator therapy (HEMT) has improved quality life, yet impact on is unknown. EA-CF have HEMT. EA- (n = 34) without (EA-Control; n 42) completed online surveys querying (1) f...

The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible microRaman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer re...

InP high electron mobility transistor (HEMT) structures with In0.53Ga0.47As channels and In0.52Al0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50–100 Å InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000–10,000...

Using a scanning tunneling microscope (STM) tip / atomic force microscope (AFM) cantilever as a cathode, the surface of titanium metal was oxidized to form a few tens of nanometers wide oxidized titanium line, which works as an energy barrier for the electron. Single electron transistors (SET), photoconductive switches, and high electron mobility transistors (HEMT) are fabricated using this pro...

GaN Power HEMT (High Electron Mobility Transistor) have been introduced in the late 80’s of the last century in their normally on version as very performing RF devices [1-3]. Some works have been dedicated to study Single Event Effects (SEEs) induced by heavy ion irradiations in normally on GaN power HEMT for RF applications [4-8]. A first study about SEE induced by heavy ions in normally off G...

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metalorganic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8mm 5mm, XRD GaN (0 0 0 2) full-width at half-...

In this work, silicon nitride thin films have been deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on both silicon samples and AlGaN/GaN High Electron Mobility Transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH4 and NH3 precursors and the formation of H2 and N2 have been ...

This paper presents an 3.5 GHz low noise amplifier that uses a two-stage configuration, using 0.35 m AlGaN/GaN HEMT on silicon substrate technology. The first stage has a cascode topology to achieve high gain, better stability and well reverse isolation. The second stage has a RC-feedback topology for wideband matching. The Tmatching network is used for broadband output matching. The results s...