Heterostructure field-effect transistor design criteria are proposed in this study. GaAs pseudomorphic high electron mobility transistors (pHEMTs) are extensively applied to radar satellite receipt dispatcher antenna, and cell phone. Devices for various doped type and different material heterostructure are simulated and analyzed. The δ-doped InGaP/InGaAs/GaAs pHEMT with high density of two dime...

Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb(2-x)V(x)Te3 hybrid heterostructure, where V doping is used to drive the TI (Sb...

Two-dimensional heterostructures with strong spin-orbit coupling have direct relevance to topological quantum materials and potential applications in spin-orbitronics. In this work, we report on novel quantum phenomena in [Pb2BiS3][AuTe2], a new 2D strong spin-orbit coupling heterostructure system. Transport measurements reveal the spin-related carrier scattering is at odds with the Abrikosov-G...

We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling i...

The weak photon absorption and fast carrier kinetics of graphene limit its application in photodetection. This limitation can be overcome by introducing photosensitive nanostructures to graphene. Herein we report the synthesis of a ZnO nanorod/graphene heterostructure by a facile in situ solution growth method. By combining the attributes of photosensitive ZnO nanorods and highly conductive gra...

A new microfabrication technique, mass transport, has made possible the development of a new breed of semiconductor laser devices. Mass-transported buried-heterostructure GaInAsP lasers are ideally suited for application in optical-fiber communication systems. In fact, the technology for mass-transported buried-heterostructure lasers has been transferred to a commercial fabricator, and these la...

The use of cross-sectional scanning tunneling microscopy (STM) to study strain in semiconductor heterostructures is discussed. In particular, intermixing between constituent heterostructure layers leads to internal strains in the heterostructure, and these strained regions are evident by displacement of the cleavage surface formed in the STM study. A theoretical analysis is made of the magnitud...

The rate of interband electron transitions assisted by LO-phonon emission is studied in an InAs/ GaSb double quantum well heterostructure, which models the active region of a type-II intersubband cascade laser. The main peak of the electron-phonon resonance corresponds to electron transitions from the lowest electron-like subband to the top of the highest light-hole-like subband that is displac...

Material variations on an atomic scale enable the quantum mechanical functionality of devices such as resonant tunneling diodes (RTDs), quantum well infrared photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs). The design and optimization of such heterostructure devices requires a detailed understanding of quantum mechanical electron transport. NEMO...

The dependence of the leakage current in 1.3m InGaAsP buried heterostructure (BH) lasers with p-n-p-n current blocking layers on well number, mesa width, and carrier density has been analyzed using a two-dimensional device simulator and compared with the electroluminescence (EL) emitted from InP layers. The analysis of the minority carrier flow reveals that the electron current flowing through ...