The sensitivity of conventional ion-sensitive field-effect transistors is limited to the Nernst limit (59.14 mV/pH). In this study, we developed a pH sensor platform based on coplanar gate AlGaN/GaN metal-oxide-semiconductor (MOS) high electron mobility transistor (HEMT) using resistive coupling effect overcome limit. For coupling, comprising control (CG) and sensing (SG) was designed. We inves...

A high power wideband feedback amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers the frequency range of DC to 5GHz with small signal gain of 9 dB. Shunt feedback topology is introduced by adding inductances to increase the bandwidth. At midband frequency, power added efficiency (PAE) of 20 % and saturation power level of 29.5 dBm were obtai...

High-current avalanche switching in a bipolar transistor structure in combination with negative differential mobility at extreme (~1 MV/cm) electric fields (e.g. in GaAs) causes generation of ultra-narrow, powerfully avalanching (“collapsing”) multiple field domains moving in a dense electron-hole plasma, which those domains form. Electrical switching with unique speed and high-power-density em...

Relaxed SiGe attracted much interest due to the applications for strained Si/SiGe high electron mobility transistor, metal-oxide-semiconductor field-effect transistor, heterojunction bipolar transistor, and other devices. High-quality relaxed SiGe templates, especially those with a low threading dislocation density and smooth surface, are critical for device performance. In this work, SiGe film...

Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower (S), high electrical conductivity (σ), and low thermal conductivity (κ). State-of-the-art nanostructuring techniques that significantly reduce κ have realized high-performance thermoelectri...

J. T. Friedlein, Prof. S. E. Shaheen, Prof. R. R. McLeod Department of Electrical Computer and Energy Engineering University of Colorado at Boulder 425 UCB , Boulder , CO 80309 , USA E-mail: [email protected] Prof. S. E. Shaheen Department of Electrical Computer and Energy Engineering University of Colorado at Boulder 425 UCB , Boulder , CO 80309 , USA Prof. G. G. Malliaras Department ...

A high electron mobility transistor (HEMT) is used with a single-electron transistor (SET) to measure single electrons tunnelling into individual InGaAs quantum dots. The SET detects a change in location of an electron once it tunnels from an underlying n-doped layer into a quantum dot lying in an intermediate layer. A HEMT on the He3 stage with the SET is used to extend the measurement bandwid...

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performa...