نتایج جستجو برای: hole recombination
تعداد نتایج: 107742 فیلتر نتایج به سال:
tio2 nanoparticles, as a photocatalyst for oxidation of dimethyl methylphosphonate (dmmp) as an organophosphorus simulant of chemical warfare agent, were prepared by using sol-gel method. the prepared nanoparticles were then modified with transition metals in order to decrease the electron-hole recombination and increase the photocatalytic activity. transition metal ions including pt, pd and ni...
in the current study, pure tio2 and cr-doped tio2 (cr@tio2) nanoparticles were synthesized via sol-gel method and the resulting materials were applied to prepare the porous tio2 electrodes for dye-sensitized solar cells (dsscs). it is hypothesized that the advantages of the doping of the metal ions into tio2 lattice are the temporary rapping of the photogenerated electron-hole (charge carriers)...
In silicon heterojunction (SHJ) solar cells, a wide bandgap material with high work function is widely used as the hole extraction pathway to attain efficiency. We introduced molybdenum oxide (MoO x ) film an effective hole-transfer layer in carrier selective contact (CSC) cells by virtue of its along function. The passivation characteristics, optical and electrical properties MoO films were in...
Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and sim...
The interfacial reaction and energy level alignment at the Si/transition metal oxide (TMO, including MoO3-x, V2O5-x, WO3-x) heterojunction are systematically investigated. We confirm that the interfacial reaction appears during the thermal deposition of TMO, with the reaction extent increasing from MoO3-x, to V2O5-x, and to WO3-x. The reaction causes the surface oxidation of silicon for faster ...
We theoretically study transport in two-dimensional semimetals. Typically, electron and hole puddles emerge in the transport layer of these systems due to smooth fluctuations in the potential. We calculate the electric response of the electron-hole liquid subject to zero and finite perpendicular magnetic fields using an effective medium approximation and a complementary mapping on resistor netw...
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