High structural perfection, wafer uniformity, and reproducibility are key parameters for high-volume, low cost manufacture of resonant tunnelling diode (RTD) terahertz (THz) devices. Low-cost, rapid, and non-destructive techniques are required for the development of such devices. In this paper, we report photoluminescence (PL) spectroscopy as a non-destructive characterisation technique for hig...

We present a study on the influence of strain-relieving InAlAs buffer layers metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy GaAs. Residual strain in layer, InGaAs barrier and InAs were assessed X-ray diffraction high-resolution transmission electron microscopy. By carefully choosing composition profile thicknesses virtually unstrained barriers embedding an well with thick...

The nonlocal dynamics of electrons in pseudomorphic AlGaAs/GaAs/InGaAs heterostructures with double-sided donor-acceptor doping AlGaAs barriers and additional digital potential short-period AlAs/GaAs superlattices around the doped regions has been theoretically studied. For studied heterostructures, introduction significantly, by 30-40%, increases drift velocity overshot when they enter region ...

1 MeV Fe' was implanted into n-type InP and InGaAs layers at different substrate temperatures, -196'C, room temperature (RT), 100°C and 2OO0C to obtain highresistivity regions. The sheet resistivity of the InP and InGaAs epilayers grown on semiinsulating (SI) InP substrates was measured as a function of substrate temperature and post-implantation annealing temperature (100 SOO'C). For InP, a ma...

SUMMARY We recently determined the values of intrinsic spin-orbit (SO) parameters for Ino.s2Alo.48As(In0.53Ga0.47As(lO nm)(Ino.s2Alo.48AS (InGaAs(InAlAs) quantum wells (QW), lattice-matched to (00l) InP, from the weak localizationjantilocalization analysis of the low-temperature magneto-conductivity measurements [1]. We have then studied the sub-band energy spectra for the InGaAs(InAlAs double ...

We report an InP/InGaAs/InP double heterojunction bipolar transistor fabricated in a triplemesa structure, exhibiting simultaneous 404 GHz fτ and 901 GHz fmax. The emitter and base contacts were defined by electron beam lithography with better than 10 nm resolution and smaller than 20 nm alignment error. The base-collector junction has been passivated by depositing a SiNx layer prior to benzocy...

Voltage, temperature, and intensity dependence of saturable absorption in InGaAs/InP multiple quantum wells are investigated and related to the lasing characteristics of intracavity loss modulated InGaAs/InP quantum well lasers. Bistability in the static laser light output/absorber voltage characteristic arises from the shape of the measured absorption/ voltage/intensity surface of the quantum ...

We present a twin-beam light source based on quasi-phase-matched (QPM) continuous-wave (CW) optical parametric generator (OPG). The source emits collinearly the signal and the idler beams at a power level of 1 nW in wavelength ranges from 790 nm to 920 nm and from 1260 nm to 1620 nm, respectively, with a bandwidth of less than 2 nm. The quantum correlation in the OPG process can be used to dire...

This paper reports on a study of the impact of <110> uniaxial strain on the characteristics of InGaAs high electron mobility transitors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These changes can be well predicted by Schrödinger-Poisson simulations of the one-dimensional electrostatics of ...