نتایج جستجو برای: insulated gate bipolar transistor

تعداد نتایج: 95915  

2014
Christophe Renault Karen Scida Kyle N. Knust Stephen E. Fosdick Richard M. Crooks

We demonstrate that carbon electrodes screen-printed directly on cellulose paper can be employed to perform bipolar electrochemistry. In addition, an array of 18 screen-printed bipolar electrodes (BPEs) can be simultaneously controlled using a single pair of driving electrodes. The electrochemical state of the BPEs is read-out using electrogenerated chemiluminescence. These results are importan...

Journal: :IEICE Electronic Express 2017
Jiaqiang Xie Li Ma Wei Li Yong Gao Ning Mei Yu

We propose two novel ways to alleviate the reverse conducting insulated gate bipolar transistor (RC-IGBT) snapback phenomenon by introducing the floating field stop layer with a lightly doped p-floating layer and recess structure at the backside. The floating field stop layer is submerged in the N-drift region and located several micrometers above the P+ anode region, which would not degrade th...

2006
N. A. Tomov M. T. Tomova D. V. Bisikalo

High resolution data in the region of the line Hα have been obtained at the time of the light maximum and after it of the 2006 optical outburst of the symbiotic binary Z And. A blue-shifted absorption component indicating outflow velocity of about 1400 kms as well as additional emission components with similar velocities, situated on the two sides of the main peak of the line were observed duri...

2010
David J. Meyer Robert Bass D. Scott Katzer David A. Deen Steven C. Binari Kevin M. Daniels Charles R. Eddy

A proof-of-concept metal–insulator–semiconductor (MIS) AlGaN/GaN high-electron mobility transistor (HEMT) that uses a self-aligned 10 nm AlOx gate insulator and SiNx passivation in the device access regions was investigated. Self-alignment of the gate insulator to metal was achieved by utilizing a submicron tri-layer photoresist pattern to lift-off sequentially-deposited AlOx dielectric and Ni/...

2011
Shilpa Mehta Vandana Khanna

In this paper various mixers are defined for CDMA applications . Using CMOS makes easier for mixers to act on same chip with other digital and analog circuits . The topologies we are defining are dual gate mixers , back gate mixers, single balanced current switching mixers and back end mixers . The backgate mixer utilizes the inherent lateral bipolar transistor in CMOS. Device simulations were ...

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