A comprehensive methodology to qualify the reliability of GaN products 2 Introduction The industry takes the reliability of silicon power transistors for granted due to over thirty years of experience and continuous improvement. This longstanding experience has resulted in a mature qualification methodology, whereby reliability and quality are certified by running standardized tests. These test...

A two-dimensional numerical analysis is presented to investigate the field effect transistor characteristics, the influence of the geometry of the component like distance between the gate and drain, or between gate and source. All simulations revealed the existence of a high electric field region near the gate contact, who create a depopulated zone around the gate, but the preceding studies hav...

−The EKV model, a continuous model for the MOS transistor, has been adapted to both partially depleted SOI MOSFETs with grounded body (GBSOI) and dynamic threshold MOS (DTMOS) transistors. Adaptation is straightforward and helps to understand the physics of the DTMOS. Excellent agreement is found between the model and the measured characteristics of GBSOI and DTMOS devices Index Terms− Silicon-...

This paper presents an Analog behavioral model (ABM) of the Insulated Gate Bipolar Transistor (IGBT) with Orcad Pspice 16.5. The Spice model was built using device parameters extracted through experiment. A full study of switching behavior of IGBT during turn-off and turn-on for inductive load with freewheeling diode is presented and simulated. All simulation results presented in this paper are...

A systematic methodology is developed in order to clarify the punch through Trench Insulated Gate Bipolar Transistor (T-IGBT) failure mechanisms which can occur under extreme operating conditions such as short circuit and clamped inductive switching. By considering a 2D dimensional physically based device simulation, and by analyzing some T-IGBT physical parameters, it is possible to identify i...

In this study, a three-dimensional “atomistic” circuitdevice coupled simulation approach is advanced to investigate the process-variation and random dopant induced characteristic fluctuations in planar metal-oxidesemiconductor field-effect-transistor (MOSFET) static random access memory (SRAM) from 65-nm to 16-nm gate length. As the gate length of the planar MOSFETs scales from 65 nm to 16 nm, ...

The availability of Silicon Germanium (SiGe) Heterojunction Bipolar Tkansistor (HBT) devices has opened a door for GHz Field Programmable Gate Arrays (FPGAs).ls2 The integration of high-speed SiGe HBTs and low-power CMOS gives a significant speed advantage t o SiGe FPGAs over CMOS FPGAs. In the past, high static power consump tion discouraged the pursuit of bipolar FPGAs from being scaled up si...

High leakage currents and short channel effects become significant enough to be the major concerns for circuit designers as semiconductor devices are miniaturized. Tunnel field effect transistor(TFET) show good scalability and have very low leakage current .These transistors have very low leakage current, good sub-threshold swing, improved short channel characteristics and lesser temperature se...

This paper reviews the main failure mechanisms occurring in modern power modules paying special attention to insulated gate bipolar transistor devices for high-power applications. This compendium provides the main failure modes, the physical or chemical processes that lead to the failure, and reports some major technological countermeasures, which are used for realizing the very stringent relia...