Thin-film polycrystalline semiconductors are currently at the forefront of inexpensive large-area solar cell and integrated circuit technologies because of their reduced processing and substrate selection constraints. Understanding the extent to which structural and electronic defects influence carrier transport in these materials is critical to controlling the optoelectronic properties, yet ma...

1 Carsten Wulff, Norwegian University of Science and Technology, Department of Physical Electronics, Trondheim, Norway [email protected] 2 Trond Ytterdal, , Norwegian University of Science and Technology, Department of Physical Electronics, Trondheim, Norway [email protected] Abstract  The work presented here aims to outfit remotely operated laboratories with circuit programmability throug...

The integration of optical interconnects in printed circuit boards (PCB) is a rapidly growing field due to a continuously increasing demand for high data rates, along with a progressive miniaturization of devices and components. For high-speed data transfer, materials and integration concepts are searched for which enable high-speed short-range connections, accounting also for miniaturization, ...

An AlGe eutectic wafer level bonding process is presented and characterized for heterogeneous integration of silicon photonics, CMOS integrated electronic circuits and active III-V components. Heterogeneous Integration of Photonics and CMOS The technology of silicon photonics integrated circuits (SiPIC) currently finds itself transitioning from research to industrial scale production [1]. The p...

The enhancement-mode MOSFET is the primary active device used in present-day digital and mixed-signal integrated circuit processes. Thus, it is important to introduce this device and associated circuit design methods early in the electronics curriculum. This article discusses four integrated circuit MOSFET amplifier configurations; the current source/active load stage, the source follower, the ...

Integrated circuits (ICs) and optoelectronic chips are the foundation stones of modern information society. The IC industry has been driven by so-called “Moore’s law” in past 60 years, now entered post Moore’s law era. In this paper, we review recent progress ICs chips. research status, technical challenges development trend devices, integrated technologies typical focused on. main contents inc...

This paper presents an optimized three-cell Nonuniform Distributed Amplifier (NUDA) suitable for optoelectronic drivers in the Q band. is first NUDA of Darlington topology designed with 0.1µm GaAs pHEMT process a transition frequency fT 130GHz. Gate microstrip line sections, drain and active device sizes were to obtain high gain large bandwidth from Monolithic Microwave Integrated Circuit (MMIC...

Technologies now exist for implementing dense surface-normal optical interconnections for silicon CMOS VLSI using hybrid integration techniques. The critical factors in determining the performance of the resulting photonic chip are the yield on the transceiver device arrays, the sensitivity and power dissipation of the receiver and transmitter circuits, and the total optical power budget availa...

A monolithically integrated photocurrent driven wavelength converter is fabricated and characterized. Bit-Error-Rate measurements at 10Gb/s show 1dB power penalties over 32nm with extinction ratios between 8.5-9.5dB. Input power is -11dBm and conversion efficiency is +13dB. ©2005 Optical Society of America OCIS codes: (250.5300) Photonic Integrated Circuits; (250.3140) Integrated Optoelectronic...