The linear and nonlinear behaviors of susceptibility via tunable Fano-type interference, based on intersubband transitions in asymmetric double quantum wells (QWs) driven coherently by a probe laser field, are analyzed. It is shown that Kerr nonlinearity can be controlled competently by tuning the energy splitting of the two excited states (the coupling strength of the tunneling), i.e. Fano-typ...

Intersubband polarization couples to collective excitations of the interacting electron gas confined in a semiconductor quantum well (QW) structure. Such excitations include correlated pair excitations (repellons) and intersubband plasmons (ISPs). The oscillator strength of intersubband resonances (ISBRs) strongly varies with QW parameters and electron density because of this coupling. Using th...

A process for the growth of uniform boron-doped Si/SiGe multiple quantum wells by rapid thermal chemical vapour deposition for studying intersubband transitions for quantum cascade laser applications has been developed. The doping density profiles are extremely sharp (∼2 nm/decade and ∼3 nm/decade for the leading and trailing boron edges, respectively) measured by high resolution secondary ion ...

Intersubband polarization couples to collective excitations of the interacting electron gas confined in a semiconductor quantum well (QW) structure. Such excitations include correlated pair excitations (repellons) and intersubband plasmons (ISPs). The oscillator strength of intersubband resonances (ISBRs) strongly varies with QW parameters and electron density because of this coupling. Using th...

We theoretically study the coherent nonlinear response of electrons confined in semiconductor quantum wells under effect an electromagnetic radiation close to resonance with intersubband transition. Our approach is based on time-dependent Schr\"odinger-Poisson equation stemming from a Hartree description Coulomb-interacting electrons. This solved by standard numerical tools and results are inte...

Interband cascade lasers are semiconductor emitting in the mid-infrared domain but relying on interband transitions, contrary to their intersubband counterparts, quantum lasers. Our experimental study of relative intensity noise a multi-mode laser at 4.1 ?m shows that room-temperature structure exhibits relaxation frequency GHz range. We demonstrate that, far above threshold current, increases ...

We show the possibility to generate bright and dark optical solitons based on bound-to-bound intersubband transitions in an asymmetric three-coupled quantum well structure. By presenting the concept of detuning management, we show that the bright optical soliton can evolve into a dark one by adiabatically changing the corresponding oneand two-photon detunings. With adjustable carrier frequencie...

Infrared phototransistors based respectively on a quantum-well and a quantumwire structures, utilizing intersubband electron transitions, are considered using developed analytical model. The dark currents and re~~onsivities of the phototransistors in question are compared. It is shown that the quantum-wire infrared phototransistor can surpass the infrared phototransistor with a quantum well in ...

We propose mid/far-infrared photodetectors based on coherent sum-frequency generation in a near-resonant cascade of interband and intersubband transitions in high optical nonlinearity asymmetric quantum well structures. Such structures can yield high detectivity and responsivity in the bandwidth of the order of 30% of a central frequency in the mid-infrared range. Resonant up-conversion detecto...