Indium tin oxide (ITO) thin films were grown on the (112̄0) surface of sapphire using fast-pulse laser deposition. It was found that when the oxygen pressure was above 2.66 Pa, the growth was epitaxial with the [111] direction perpendicular to the substrate. The epitaxial relation and crystal quality were evaluated by using high-resolution X-ray diffraction, which showed distinct pendellösung os...

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction...

The use of indium tin oxide (ITO) thin films as electrodes for integrated optical electrochemical sensor devices is discussed. The effect of various thicknesses of ITO overlayers exhibiting low resistivity and high transparency on potassium ion-exchanged waveguides fabricated in glass substrates is investigated over the wavelength range 500-900 nm. ITO overlayers are formed by reactive thermal ...

The interfacial electronic structures of a bilayer of fullerene (C60) and zinc phthalocyanine (ZnPc) grown on vanadium pentoxide (V₂O₅) thin films deposited using radio frequency sputtering under various conditions were studied using X-ray and ultraviolet photoelectron spectroscopy. The energy difference between the highest occupied molecular orbital (HOMO) level of the ZnPc layer and the lowes...

We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/ Al0.2Ga0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devic...

Using two kinds of targets (gallium and silicon dioxide) the rf magnetron sputtering deposited technique, GdOx:SiO2 thin film RRAM devices were on TiN/Si substrate to form a metal–insulator–metal (MIM) structure. In addition, different oxygen concentrations power parameters prepared for films. Decrease defects vacancies films used repaired by rapid thermal annealing technology. Indium tin oxide...

Zinc selenide (ZnSe) a II-VI compound semiconductor with cubic zinc blende structure and a direct bandgap of 2.7 eV is found to be a very promising material for optoelectronic devices (Venkatachalam et al., 2007a). Semiconductor heterostructures employing zinc selenide and related alloys are an option for the production of optoelectronic devices emitting in the blue – green spectral range (Haas...

We report an electrophoretic deposition method for the fabrication of gold nanoparticle (GNP) thin films as sensitive surface-enhanced Raman scattering (SERS) substrates. In this method, GNP sol, synthesized by a seed-mediated growth approach, and indium tin oxide (ITO) glass substrates were utilized as an electrophoretic solution and electrodes, respectively. From the scanning electron microsc...

Indium tin oxide (ITO) films have been deposited onto glass substrates by ifmagnetron sputtering without insitu substrate heating. The as-deposited films have an electrical resistivity of 5x1O a-cm, visible transmittance of about 85%, and infrared (IR) reflectance of above 80% at 5 jim. The effect of sputtering parameters on the deposition rate and the electrical and optical properties of ITO f...