In this work, the performance of heterojunction L-Tunnel Field Effect Transistor (LTFET) has been analyzed with different engineering techniques such as bandgap engineering, pocket work-function and gate dielectric respectively. The electrical characteristics device investigated by using Synopsys Sentaurus TCAD tool compared some recent other TFETs. in terms DC well AC analysis offers ON-state ...

We proposed a scheme of armchair graphene nanoribbon (AGNR) based tunnel field-effect transistor (TFET). The simulated device consists two electrodes with zigzag termination that are separated by narrow gap. Fermi level is controlled common back gate. main idea on taking advantage the electronic effects smooth edge atoms and investigatinge effect applied small uniaxial tensile strain gate volta...

Abstract Field‐effect transistors have strong applications in biosensing field from pH and glucose monitoring to genomics, proteomics, cell signaling assays, biomedical diagnostics general. Notable advantages are the high sensitivity (thanks intrinsic amplification), quick response (useful for real‐time monitoring), suitability miniaturization, compact portable read‐out systems. The initial con...

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The choice of gate metal technology for junctionless transistors needs to have diverse characteristics as metals distinct work functions and hence, they show incompatibility while tailoring threshold the device. In such a scenario, bimetallic stacked can be promising candidate present wide range tunable required nano-regime transistors. This paper explores electronic phenomena occurring at meta...

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer ...

Structures in which magnetic and electronic materials are combined offer a variety of possibilities for realization of devices with improvement functionality or performance compared to conventional devices. We have designed, characterized, and analyzed a novel hybrid magnetoelectronic device: a monolithic field-effect-transistor-amplified magnetic field sensor in which a granular tunnel magneto...