نتایج جستجو برای: keywords ge interaction

تعداد نتایج: 2497707  

2009
M. MITKOVA A. KOVALSKIY H. JAIN Y. SAKAGUCHI

We report results on photoinduced changes in Ge-chalcogenide glasses, which occur in ultra high vacuum (UHV) vs. in air. They demonstrate the important role of oxygen that determines the magnitude and the type of the photoinduced effects. To observe photodiffusion without the presence of oxygen, Ag/glass thin films were prepared, subjected to photodiffusion, and chemically analyzed, all within ...

Journal: :Journal of virology 2010
J E Carpenter W Jackson G A de Souza L Haarr C Grose

Insulin degradation enzyme (IDE) is a 110-kDa zinc metalloprotease found in the cytosol of all cells. IDE degrades insulin and a variety of small proteins including amyloid-beta. Recently, IDE has been proposed as the receptor for varicella-zoster virus (VZV) attachment. During our reassessment, some of the original studies were repeated and expanded in scope. We first confirmed that IDE antibo...

Journal: :Pharmacology and Clinical Pharmacy Research 2020

Journal: :Journal of dramatic theory and criticism 2021

Journal: :Small Axe: A Caribbean Journal of Criticism 2022

This essay introduces a new featured section, to be published in Small Axe annually, that explores the critical vocabulary of field Caribbean studies.

Journal: :English Text Construction 2012

Journal: :African Studies Review 2023

Abstract “Queer” is a relatively recent and somewhat controversial term in African studies. Yet it proving to be productive, not only for understanding subjectivities of sexuality gender, but also situating Africa’s position the larger economy knowledge. Otu van Klinken explore productive tensions between “queer” “Africa,” aim read Africa as queer from Africa. Thus, rather than imagining polar ...

Journal: : 2023

The investigations of Pd/Ge/Au contact system forming regimes influence on the specific resistivity to n-type conductivity GaAs layer were carried out. method samples surface treatment before layers evaporation and thermal annealing in H 2 , N Ar atmosphere parameters was investigated. value (2-3)· 10 -6 Ohm· cm at reduced temperature 190 o C archived.. Keywords: Pd/Ge/Au, n-GaAs, treatment,

Journal: :Nanotechnology 2012
S R C Pinto M Buljan L Marques J Martín-Sánchez O Conde' A Chahboun A R Ramos N P Barradas E Alves S Bernstorff J Grenzer A Mücklich M M D Ramos M J M Gomes

In this work, the influence of air pressure during the annealing of Ge quantum dot (QD) lattices embedded in an amorphous Al(2)O(3) matrix on the structural, morphological and compositional properties of the film is studied. The formation of a regularly ordered void lattice after performing a thermal annealing process is explored. Our results show that both the Ge desorption from the film and t...

Journal: :Journal of the Medical Library Association : JMLA 2015

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