Local restructuring of metallic nanorod arrays and the fabrication of metallodielectric microstructures using direct femtosecond laser writing technologies have been studied. Femtosecond laser ablation has demonstrated the possibility to create sharp boundaries down to a single nanorod on the nanorod array. Polymer structures on the nanorods can be used to control the resonance wavelengths and ...

Monolithically integrated four-channel distributed feedback (DFB) laser array has been fabricated by metal organic vapor phase epitaxy (MOVPE) selective area growth for 1.55μm coarsewavelength division multiplexing (CWDM) systems. Wide-stripe MOVPE selective area growth and electron-beam lithography are used to obtain wide CWDM channel spacing of 20 nm. Optical outputs from the simultaneously b...

An integrated sensor system is presented which displays passive long range operation to 100 km at pico-strain (pepsilon) sensitivity to low frequencies (4 Hz) in wavelength division multiplexed operation with negligible cross-talk (better than -75 dB). This has been achieved by pre-stabilizing and multiplexing all interrogation lasers for the sensor array to a single optical frequency reference...

Broad-area laser (BAL) diodes have found use in numerous applications requiring multi-watt powers, but remain limited by poor spatial beam quality. A novel laser cavity that enhances the brightness of a BAL array has been demonstrated. Wavelength beam combining (WBC) is used to spatially overlap output from the emitters. Improved beam quality is achieved by imaging the fast-axis mode onto the s...

High-power 2.3m In(Al)GaAsSb–GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100m-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 s/300 Hz) at a heatsink temperature of 18 C. Array power conversion efficiency peaked at 30 A and was about 9%. Device internal efficiency w...

It is shown that the interference between amplified spontaneous emission into the nonlasing supermode and the laser field of a semiconductor laser array causes spatial hole burning, which couples the dynamics of the amplified spontaneous emission with the laser field. In particular, phase locking between the amplified spontaneous emission and the lasing mode leads to the formation of a spectral...