The influence of lattice strain on non-stoichiometry and surface chemical composition was investigated for epitaxial Nd2NiO4+δ (NNO) films during annealing in ultra high vacuum (below 10 mbar) and temperatures of up to 700C. (100)and (001)-oriented films with tensile and compressive lattice strain along c-axis were fabricated using pulsed laser deposition method. A significant decrease in the c...

Spin-polarized electron photoemission has been investigated for strained GaAs epitaxially grown on a GaAsr-,P, buffer. The lattice mismatched heterostructure results in a highly strained epitaxial layer and significant enhancement of electronspin polarization is observed. The effect of epitaxial layer strain is studied for a variety of samples with epitaxial layer thicknesses varying from 0.1 p...

Based on a hydrogenic state and strain changes upon defect charging, we propose a simple, parameter-free model that agrees well with the observed group III and V monovalent-impurity ionization energies in Si, revealing the importance of such strain effects. Changes in lattice strain upon defect charging are obtained via superposition and elasticity theory using atomic relaxations from density f...

Strain in B-implanted laser thermal processed sLTPd silicon is reduced by coimplantation of In. Strain in the codoped layer is calculated using lattice constants measured by high-resolution x-ray diffraction. Compensation of the strain with increasing In dose corresponds to suppression of the carrier deactivation during post-LTP annealing. © 2005 American Institute of Physics. fDOI: 10.1063/1.1...

Self-assembled nanocomposites have been extensively investigated due to the novel properties that can emerge when multiple material phases are combined. Growth of epitaxial nanocomposites using lattice-mismatched constituents also enables strain-engineering, which can be used to further enhance material properties. Here, we report self-assembled growth of highly tensile-strained Ge/In0.52Al0.48...

Real time, in situ, multiframe, diffraction, and imaging measurements on bulk samples under high and ultrahigh strain-rate loading are highly desirable for micro- and mesoscale sciences. We present an experimental demonstration of multiframe transient x-ray diffraction (TXD) along with simultaneous imaging under high strain-rate loading at the Advanced Photon Source beamline 32ID. The feasibili...

The electronic, structural, and thermodynamic properties of cubic (zinc blende) group-III nitride ternary InxGa1−xN and quaternary AlxInyGa1−x−yN alloys are investigated by combining first-principles total energy calculations and cluster expansion methods. External biaxial strain on the alloys are taken into account in the calculations. While alloy fluctuations and strain effects play a minor r...

We propose a new method for strain computation in mesh-free simulations. Without storing connectivity information, we compute strain using local rest states that are implicitly defined by the current system configuration. Particles in the simulation are subject to restoring forces arranging them in a locally defined lattice. The orientation of the lattice is found using local shape matching tec...

Strain at surfaces and interfaces play an important role in the optical and electronic properties of materials. MeV ion-induced strain determination in single crystal silicon substrates and in Ag (nanoisland)/Si(111) at surface and interfaces has been carried out using transmission electron microscopy (TEM) and surface-sensitive X-ray diffraction. Ag nanoislands are grown under various surface ...

Lattice strain environment of superlattices causes shift electronic bands and electron relaxation times modulated transport properties.