نتایج جستجو برای: lpcvd
تعداد نتایج: 265 فیلتر نتایج به سال:
Interdigitated finger (comb) structures are demonstrated to be effective for exciting electrostatically the resonance of polysilicon microstructures parallel to the plane of the substrate. Linear plates suspended by a folded-cantilever truss and torsional plates suspended by spiral and serpentine springs are fabricated from a 2/~m-thick phosphorus-doped low-pressure chemical-vapordeposited (LPC...
The Tunneling-Dielectric TFT (TDTFT), that has thin dielectric films at both ends of the channel fabrication area, was fabricated with 1.7 nm SiNX film by LPCVD method. The conduction mechanism of the drain currents was examined in the temperatures from 293 to 623 K experimentally and theoretically. The Id-Vg characteristics were reproduced by the direct tunneling (DT) via SiNX film with an ass...
When deposited at room temperature, sputtered NiTi thin films are amorphous and need to be crystallized before they can be used as a functional material. We present the results of an annealing study on substrate-constrained NiTi shape memory thin films. Amorphous films of a NiTi shape memory alloy were deposited by UHV sputtering. Films of thickness 1.0 μm were grown on (100) Si wafers both wit...
Optical ring resonators (ORRs) are good candidates to provide continuously tunable delay in optical beam forming networks (OBFNs) for phased array antenna systems. Delay and splitting/combining elements can be integrated on a single optical chip to form an OBFN. A state-of-the-art 1×8 OBFN chip has been fabricated in LPCVD waveguide technology. It is designed with 1 input and 8 outputs, between...
A novel Silicon Sacrificial Layer Dry Etching (SSLDE) technique using sputtered amorphous or LPCVD polycrystalline silicon as sacrificial layers and a dry fluorine-based (SF6) plasma chemistry as releasing process is reported with a detailed experimental study of the release etching step. The process is capable of various applications in surface micromachining process, and can be applied in fab...
We report a new method for growing hexagonal columnar nanograin structured silicon carbide (SiC) thin films on silicon substrates by using graphene-graphitic carbon nanoflakes (GGNs) templates from solid carbon sources. The growth was carried out in a conventional low pressure chemical vapor deposition system (LPCVD). The GGNs are small plates with lateral sizes of around 100 nm and overlap eac...
Pyrocarbon materials containing various amounts of boron have been prepared by LPCVD from BCl3–C3H8–H2 precursor mixtures. The growth rate is increased with respect to pure pyrocarbon deposition. By increasing BCl3 / (C3H8 + BCl3) ratio up to 85%, the incorporation of boron can reach 33 at.%. A small amount of boron (e.g. 8 at.%) highly enhances the anisotropy of pyrocarbon, as evidenced by opt...
We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. were grown low-pressure chemical vapor deposition (LPCVD) reactor with either an oxygen or gallium delivery tube. Films 6 degree offcut sapphire (010) substrates rates between 0.5 - 22 {\mu}m/hr. By controlling pressure, wide range Hall carrier concentrations 10^17 10^19 cm-3 achiev...
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