نتایج جستجو برای: metal assisted chemical etching
تعداد نتایج: 688698 فیلتر نتایج به سال:
Silicon carbide (SiC) is a wide bandgap third-generation semiconductor well suited for harsh environment power electronics, micro and nano electromechanical systems, emerging quantum technology by serving as hosts states via defect centers. The chemical inertness of SiC limits viable etching techniques to plasma-based reactive ion methods; however, these could have significant undesirable effec...
The authors report a new, important phenomenon: photo-assisted etching of p-type Si in chlorinecontaining plasmas. This mechanism was discovered in mostly Ar plasmas with a few percent added Cl2, but was found to be even more important in pure Cl2 plasmas. Nearly monoenergetic ion energy distributions (IEDs) were obtained by applying a synchronous dc bias on a “boundary electrode” during the af...
We report solar cells with both black Si antireflection and SiO2 surface passivation provided by inexpensive liquid-phase chemistry, rather than by conventional vacuum-based techniques. Preliminary cell efficiency has reached 16.4%. Nanoporous black Si antireflection on crystalline Si by aqueous etching promises low surface reflection for high photon utilization, together with lower manufacturi...
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